Allicdata Part #: | FDMS86520LFSTR-ND |
Manufacturer Part#: |
FDMS86520L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N CH 60V 13.5A 8PQFN |
More Detail: | N-Channel 60V 13.5A (Ta), 22A (Tc) 2.5W (Ta), 69W ... |
DataSheet: | FDMS86520L Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-PQFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 69W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4615pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 8.2 mOhm @ 13.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 13.5A (Ta), 22A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FDMF86520L is a polarity N-Channel Enhancement-Mode Power MOSFET used in a variety of simple applications such as audio amplifiers, DC/DC converters, Switching Regulators and Motor Controls.
The device is the successor to the FDMS86520W which provided superior power control than other families of devices, while ensuring low gate-to-source on-state impedance. The FDMS86520L MOSFET was designed to take the place of Complex Power ICs and other active components for applications such as motor drives, power management, buck converters and other amplifier or switching regulator applications.
FDMF86520L is based on the Single-Ended, Floating-Source topology, which utilizes an internal Schottky diode connected between the source and drain in order to enable fast switching times and superior thermal performance. This topology also provides superior transient and frequency response over the classic P-type MOSFET. The device has an integrated Run/Dynamic parallel FET switch, enabling the device to operate as a class D or E amplifier with minimal external components, or as a signal amplifier with very low output offset voltage.
The device also includes a built-in sense amplifier, which enables precise threshold detection and improved transient response compared to other families of devices. The FDMS86520L MOSFET also includes a built-in protection feature, which automatically shuts off the device when an over-current situation arises. This allows the device to be used in a wider range of applications than other families of devices and reduces the number of components needed to complete the design.
FDMF86520L is made using a patented process which has been optimized to provide superior performance. The process was designed to maintain high device reliability, lower switching losses, and reduce total gate charge (QG). Due to its low gate charge, the device can be used in applications operating at higher frequencies, such as switching regulators. This combination of features makes the FDMS86520L MOSFET the ideal choice for applications in a variety of fields, such as automotive, industrial, and medical.
The specific data is subject to PDF, and the above content is for reference
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