FDMS86550 Allicdata Electronics
Allicdata Part #:

FDMS86550TR-ND

Manufacturer Part#:

FDMS86550

Price: $ 1.27
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 8MLP
More Detail: N-Channel 60V 32A (Ta), 155A (Tc) 2.7W (Ta), 156W ...
DataSheet: FDMS86550 datasheetFDMS86550 Datasheet/PDF
Quantity: 1000
1 +: $ 1.27200
10 +: $ 1.23384
100 +: $ 1.20840
1000 +: $ 1.18296
10000 +: $ 1.14480
Stock 1000Can Ship Immediately
$ 1.27
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.7W (Ta), 156W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 11530pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 1.65 mOhm @ 32A, 10V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 155A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDMS8650 is a single Formation and Diffused Metal Semiconductor Field Effect Transistor (FET) device developed by Fairchild Semiconductor. It is a 2.0V device capable of handling up to 10A, making it ideal for applications such as power supplies, lighting control and motor control. The FDMS8650 consists of a single Gate, a single Source, and a single Drain. The FDMS8650 is composed of an oxidation layer, a substrate, and a diffusion layer. These three components interact to control the flow of current through the device. This makes the FDMS8650 the ideal choice for applications requiring the precise control of current in a space-efficient manner.

The FDMS8650 is constructed with a diffusion layer made of a dielectric material, such as silicon dioxide (SiO2). This layer forms the “Gate” of the FET. A conductive material, such as Gold, is then used to form the “Source” of the device. The Source and the Gate are separated by an insulation layer that prevents current from passing between them. Finally, the “Drain” of the FET is formed by a second diffusion layer, also made of a dielectric material, such as SiO2. This layer is connected to the other diffusion layer with a conductive material, such as Gold or Aluminum. This combined structure forms the complete FDMS8650 Field Effect Transistor.

The working principle of the FDMS8650 involves controlling the flow of electrons through the device. This is accomplished by varying the voltage across the Gate. When a positive voltage is applied to the Gate, it will create an electric field which will reduce the potential barrier of the diffusion layers. This reduces the resistance of the device, allowing current to flow through the Drain. Conversely, when a negative voltage is applied to the Gate, the electric field created will increase the potential barrier of the diffusion layers. This increases the resistance of the device, inhibiting current from flowing through the Drain.

This makes the FDMS8650 ideal for use in applications where precise control of current is required. The FDMS8650 is typically used in power supplies, lighting control, motor control and other applications where a precise control of current is needed. This is due to the fact that the application of different voltages to the Gate will cause the current flowing through the device to be regulated precisely. Additionally, the FDMS8650 is a space-efficient device, making it suitable for applications where space is at a premium.

In conclusion, the FDMS8650 is a single Formation and Diffused Metal Semiconductor Field Effect Transistor device developed by Fairchild Semiconductor. It is a 2.0V device capable of handling up to 10A, making it ideal for applications such as power supplies, lighting control and motor control. The FDMS8650 works by controlling the flow of electrons through the device, by varying the voltage across the Gate. This makes the FDMS8650 ideal for use in applications where precise control of current is required, as well as in space-efficient applications.

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