
FDMS8672S Discrete Semiconductor Products |
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Allicdata Part #: | FDMS8672STR-ND |
Manufacturer Part#: |
FDMS8672S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 17A POWER56 |
More Detail: | N-Channel 30V 17A (Ta), 35A (Tc) 2.5W (Ta), 50W (T... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-PQFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2515pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 17A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Ta), 35A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FDMS8672S is a part of Fairchild\'s family of FETs, or Field Effect Transistors, specifically MOSFETs, or Metal-Oxide Semiconductor Field Effect Transistors. This single MOSFET has a power rating of 130 watts and a drain-source voltage of 30 volts. It is a N-Channel MOSFET with a very low RDS (ON) at only 3 milliohms.
Like all FETs, the FDMS8672S operates through modulating a voltage in order to control current flow in circuits. This is opposed to a BJT, or Bipolar Junction Transistor, which operates by controlling current flow with current. This allows the FDMS8672S, and other FETs, to operate with extremely low power, making them ideal for low power electronics applications.
The FDMS8672S can be used in a wide range of applications, including power amplifiers, switching circuits, and motor controls. It can be used in these applications due to its very low "on" resistance, meaning it requires very little voltage to control current flow. This makes it ideal for switching circuits, where it can be used to switch on and off large amounts of power with relatively little power itself.
The FDMS8672S works through the use of a very thin layer of a metal-oxide semiconductor. This layer, called the gate, is placed between two metal plates, called the source and the drain. When a voltage is applied to the gate, it generates a field that causes electrons to flow from the source to the drain. This generates a current in the circuit, and can be used to control other components, such as amplifiers, motor control circuits, and other electronic components.
The FDMS8672S is a particularly useful device for its low RDS ON value, meaning it can be used to control high-power applications with low power itself. This allows for more efficient power use in electronics applications, and the device has the potential to save energy in many circuits. It is also very reliable, with a high voltage break-down of 30 AS, making it ideal for both high and low voltage applications.
The FDMS8672S is a versatile and reliable MOSFET device, offering many advantages over BJTs in applications such as power amplifiers, switching circuits, and motor control circuits. It provides an efficient way to control current with low power, making it an ideal choice for applications where energy efficiency is key. In addition, its high voltage break-down rating makes it suitable for use in both low and high voltage applications, ensuring its reliability even in extreme environments. This makes it an ideal choice for any application where efficiency and reliability are important.
The specific data is subject to PDF, and the above content is for reference
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