Allicdata Part #: | FQPF11N40CFS-ND |
Manufacturer Part#: |
FQPF11N40C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 400V 10.5A TO-220F |
More Detail: | N-Channel 400V 10.5A (Tc) 44W (Tc) Through Hole TO... |
DataSheet: | FQPF11N40C Datasheet/PDF |
Quantity: | 656 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 44W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1090pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 530 mOhm @ 5.25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10.5A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FQPF11N40C transistor is one of the most popular MOSFETs in the market. It is made by Fairchild and is a single drain enhancement-mode Power MOSFET. This type of transistor is mainly used in high-power applications and can handle up to 40 volts at 11 amps continuous drain current.
The FQPF11N40C has a key feature: it is optimized for replacement or upgrade of any standard gate-controlled short circuit protected circuit protection (SCCS) transistor. This allows for improved efficiency and performance. Due to its low on-state resistance of 4.1 milliohm, it can handle up to 28A of peak current with a low gate voltage.
The transistor has a structure similar to most other MOSFETs, but with a few enhancements. It is made of a P-channel insulated gate MOSFET with a high-side ESD protection diode. The drain-to-source voltage is rated at 40V and the drain current at 11A. The gate voltage is -4.5V to -20V and the threshold voltage for turn-on is -4V. The total gate capacitance is 20pF, which is a bit higher than other MOSFETs.
A key aspect of the FQPF11N40C is its working principle. It works by using a P- type substrate that is insulated from the drain and source electrodes. The gate terminal is aligned with the substrate and is negatively biased with respect to the source terminal. This creates a depletion region around the gate and allows the transistor to turn on and off. When the gate is activated, the channel of current forms between the drain and source and enables the transistor to conduct current.
The FQPF11N40C is a great choice when it comes to high-powered applications. Its low on-state resistance, high gate voltage, and high peak current ratings mean that it can handle most any load that you can throw at it. It has a high drain-to-source breakdown voltage and can switch high voltages as well. It also has a low gate capacitance, which reduces power dissipation.
This transistor is commonly used in power switches, regulators and amplifiers, DC-DC converters, lighting control, and switching power supplies. Its low on-state resistance makes it ideal for low voltage, high current applications such as audio amplification and power supplies for consumer electronics. Its low gate capacitance also makes it suitable for high speed application like motor control and control circuits.
In conclusion, the FQPF11N40C is an excellent choice for a variety of high-power applications. Its low on-state resistance, high gate voltage, and high peak current rating mean that it can easily handle any load. Its low gate capacitance further increases its efficiency in high-speed applications. It is also optimized for replacement or upgrade of any standard gate-controlled short circuit protected circuit protection (SCCS), making it a great choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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