FQPF12N60C

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FQPF12N60C Application Field and Working Principle

In the power electronics application field, FQPF12N60C is a N-channel enhancement-mode Field-Effect Transistor (FET) based on the advanced high-voltage MOSFET technology with an excellent brand effect on breakdown voltage (BVdss). FQPF12N60C is widely used in DC-DC converters, AC/DC converters, motor drivers, as well as DC administrative equipment such as servers, computers, and printers.

FQPF12N60C consists of a GaN body, two enhanced MOSFETs and a central power transistor. The two MOSFETs form an N-channel MOSFET, and the central power transistor forms a power transistor. FQPF12N60C has excellent on-current performance, and its maximum drain-source on-current can reach 12A. It exhibits low gate charge, low resistance and a fast switching response, making it a great choice for high-performance power vacuum tube applications. In addition, it has a wide variety of design flexibility, which helps users to achieve their desired performance.

Working Principle of FQPF12N60C

The working principle of FQPF12N60C is based on the semiconductor material. A semiconductor is a material with properties between those of metals and insulators, which means it has a range of conductivity between totally conductive and totally insulative. This range of conductivity makes it a useful component for power electronics applications. In FQPF12N60C, the semiconductor materials are N-channel MOSFETs and power transistors. Both of these semiconductor materials can be turned on and off by applying a voltage to the gate of each component. When a voltage is applied, the component turns on and current will flow through the component.

In FQPF12N60C, the two N-channel MOSFETs are connected to form an N-channel MOSFET. This MOSFET is connected to the central power transistor, which forms a power transistor. The gates of the N-channel MOSFETs and power transistor are connected to a voltage source, allowing them to be individually turned on or off. When a voltage is applied to the gates, the N-channel MOSFETs and the power transistor will turn on and the current will flow through them. The current through the FQPF12N60C will be proportional to the voltage applied to the gates.

Conclusion

FQPF12N60C is a high-performance N-channel enhancement-mode Field-Effect Transistor (FET) used mainly in power electronics applications. It has excellent on-current performance, low gate charge, low resistance and a fast switching response, making it a great choice for high-performance power vacuum tube applications. The working principle of FQPF12N60C is based on semiconductor materials and can be divided into two parts: two N-channel MOSFETs and a power transistor.

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