FQPF9P25YDTU Allicdata Electronics
Allicdata Part #:

FQPF9P25YDTU-ND

Manufacturer Part#:

FQPF9P25YDTU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 250V 6A
More Detail: P-Channel 250V 6A (Tc) 50W (Tc) Through Hole TO-22...
DataSheet: FQPF9P25YDTU datasheetFQPF9P25YDTU Datasheet/PDF
Quantity: 721
Stock 721Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3 Full Pack, Formed Leads
Supplier Device Package: TO-220F-3 (Y-Forming)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 620 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

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The FQPF9P25YDTU is a type of field-effect transistor (FET), specifically a metal-oxide-semiconductor FET (MOSFET). It is a single-gate, enhancement-mode device that works through voltage-controlled bipolar conduction to switch on and off an electrical signal. This makes it useful in a wide range of applications, such as audio amplifiers, active filters, switches, power amplifiers, and various others.

The FQPF9P25YDTU is an enhancement-mode MOSFET, which means that it has an extra layer of insulation as part of its gate. This layer is insulated by an oxide layer, which is stronger than normal metal layers and prevents current flow. The extra insulation makes the FQPF9P25YDTU less susceptible to the effects of external electric fields and gives it a higher threshold voltage. This means that it can be used for higher-speed switching or where greater control precision is required.

The FQPF9P25YDTU operates through a bipolar conduction effect. This means that an electric field is applied to the gate of the device, which increases the number of conductive channels in the source and drain regions. As the applied voltage increases, the number of these channels increases, allowing a higher current flow. This is what allows the device to be turned on and off, as the amount of current flowing through the channels can be easily controlled.

The FQPF9P25YDTU is a versatile device that can be used in a variety of applications. It is particularly useful in audio amplifiers, switches, and power supplies, where its controlled voltage switching capability is ideal for controlling power safely. Additionally, its high threshold voltage makes it suitable for applications where a higher switching speed or greater control is needed.

In addition to its wide range of applications, the FQPF9P25YDTU is also a great choice for its low power consumption. The device uses a lower operating current than other FETs, making it more energy-efficient. The device is also relatively small, allowing it to fit easily into compact designs.

Overall, the FQPF9P25YDTU is a versatile, low-power MOSFET that can be used in a wide range of applications. Its application field ranges from audio amplifiers and power supplies to sophisticated switching, while its high threshold voltage and small size make it suitable for high-speed and precision designs. In addition, its low power consumption makes it a great choice for energy-saving applications.

The specific data is subject to PDF, and the above content is for reference

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