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FQPF13N50CF application field and working principle

The FQPF13N50CF is a N-channel MOSFET that is designed for higher current and voltage applications. This device features a fast switching action, excellent circuit protection, and low on-resistance, making it ideal for applications that require high-current, low-voltage operation.

Features:

• Low RDS(on)
• Low gate to source charge
• High speed switching
• Favorable temperature coefficient (Tj coefficient)
• ABS plastic package has Underwriters Laboratory Flammability Classification 94V-0

Applications:

• DC/DC converters
• Power switching applications
• High current DC/AC converters
• High frequency switching power supplies
• Telecom/Datacom applications

Working Principle

The FQPF13N50CF is a N-channel metal oxide semiconductor field effect transistor (MOSFET), which uses the metal oxide in the gate oxide layer to control the current passing from the source to the drain. The FQPF13N50CF is a depletion-mode device, which means that when the gate is at 0V, there is still a small leakage current flowing from the source to the drain. When a positive voltage is applied to the gate, the resistance between the source and the drain is decreased, which allows more current to flow. When the gate voltage is increased even further, the resistance between the source and the drain decreases to the point where the device is saturated and the current is at its maximum. When the gate voltage is decreased, the current decreases until the device is off.

Conclusion

The FQPF13N50CF is an excellent choice for higher current and voltage operations. Its fast switching action, excellent circuit protection, and low on-resistance make it an ideal choice for applications that require high-current, low-voltage operation. It is also well suited for DC/DC converters, power switching applications, high current DC/AC converters, high frequency switching power supplies, and telecom/datacom applications.

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