FQPF5N15 Allicdata Electronics
Allicdata Part #:

FQPF5N15-ND

Manufacturer Part#:

FQPF5N15

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 150V 4.2A TO-220F
More Detail: N-Channel 150V 4.2A (Tc) 32W (Tc) Through Hole TO-...
DataSheet: FQPF5N15 datasheetFQPF5N15 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 32W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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FQPF5N15 belongs to a class of transistors that are known as field effect transistors (FETs), more specifically metal oxide semiconductor field effect transistors (MOSFETs) and even more specifically single MOSFETs. This type of transistor has a wide range of uses and applications, in everything from computers, to audio equipment, to medical devices.

FQPF5N15 has a drain-source voltage rating of 40V and a drain current rating of 6A. It has a low gate threshold voltage of 3V and a low off-state drain-source leakage current of 1.2mA. Essentially, this means that it has excellent switching performance and minimal leakage current. This is ideal for a wide range of applications ranging from power control to signal switching.

FQPF5N15 also offers low on-state resistance, ensuring minimal losses when conducting current. This is critical for applications requiring precise current control, such as power supplies, audio amplifiers and LED drivers. In addition, the transistor is designed to have fast switching times, allowing for high-speed switching in applications such as switching-mode power supplies.

The transistor is controlled by an input voltage applied to its gate. This is known as the gate voltage and is responsible for controlling the current flow between the source and the drain. This is known as the drain-source voltage, or VDS. When a positive gate voltage is applied, the FQPF5N15 transistor is said to be in the on-state and the drain current will be limited only by the transistor’s on-state resistance. When the gate voltage is removed, the transistor is in the off-state and the drain current is limited by the transistor’s off-state leakage current.

The FQPF5N15 transistor is suitable for a wide range of applications, from power control and motor control, to switching-mode power supplies and audio amplifiers. It is also suitable for various communications and industrial applications, as well as for a variety of automotive and medical applications.

At the same time, the device’s low on-resistance, low gate threshold voltage, and rapid switching times make it an ideal choice for power management applications, such as LED drivers, where efficiency and accuracy are of the utmost importance. This makes the FQPF5N15 an incredibly versatile and useful transistor.

The specific data is subject to PDF, and the above content is for reference

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