Allicdata Part #: | FQPF5N15-ND |
Manufacturer Part#: |
FQPF5N15 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 4.2A TO-220F |
More Detail: | N-Channel 150V 4.2A (Tc) 32W (Tc) Through Hole TO-... |
DataSheet: | FQPF5N15 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 32W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 230pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 800 mOhm @ 2.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.2A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FQPF5N15 belongs to a class of transistors that are known as field effect transistors (FETs), more specifically metal oxide semiconductor field effect transistors (MOSFETs) and even more specifically single MOSFETs. This type of transistor has a wide range of uses and applications, in everything from computers, to audio equipment, to medical devices.
FQPF5N15 has a drain-source voltage rating of 40V and a drain current rating of 6A. It has a low gate threshold voltage of 3V and a low off-state drain-source leakage current of 1.2mA. Essentially, this means that it has excellent switching performance and minimal leakage current. This is ideal for a wide range of applications ranging from power control to signal switching.
FQPF5N15 also offers low on-state resistance, ensuring minimal losses when conducting current. This is critical for applications requiring precise current control, such as power supplies, audio amplifiers and LED drivers. In addition, the transistor is designed to have fast switching times, allowing for high-speed switching in applications such as switching-mode power supplies.
The transistor is controlled by an input voltage applied to its gate. This is known as the gate voltage and is responsible for controlling the current flow between the source and the drain. This is known as the drain-source voltage, or VDS. When a positive gate voltage is applied, the FQPF5N15 transistor is said to be in the on-state and the drain current will be limited only by the transistor’s on-state resistance. When the gate voltage is removed, the transistor is in the off-state and the drain current is limited by the transistor’s off-state leakage current.
The FQPF5N15 transistor is suitable for a wide range of applications, from power control and motor control, to switching-mode power supplies and audio amplifiers. It is also suitable for various communications and industrial applications, as well as for a variety of automotive and medical applications.
At the same time, the device’s low on-resistance, low gate threshold voltage, and rapid switching times make it an ideal choice for power management applications, such as LED drivers, where efficiency and accuracy are of the utmost importance. This makes the FQPF5N15 an incredibly versatile and useful transistor.
The specific data is subject to PDF, and the above content is for reference
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