FQPF6N80CT

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The FQPF6N80CT is a n-channel MOSFET developed by Infineon Technologies.

A MOSFET is an acronym for Metal Oxide Semiconductor Field Effect Transistor. It is a three terminal device that is used as a switch or amplifier in electronic circuits. The three terminals are the Gate (G), Source (S) and Drain (D). MOSFETs are widely used in various applications due to their excellent characteristics such as high breakdown voltage, low on-resistance, and low input capacitance. The FQPF6N80CT is a popular MOSFET, providing excellent performance for a wide range of applications.

Application Field

The FQPF6N80CT is a 500V, 8A device, suitable for a wide range of applications such as switching, high-frequency switching, motor control, audio, and lighting. It is ideal for motor control applications due to its low on-resistance, high breakdown voltage and low gate charge. It is also suitable for halogen and LED lighting, as it can handle high-frequency switching with low loss.

The FQPF6N80CT has also been used in a variety of audio equipment, such as amplifiers and loudspeakers. The low on-resistance and high breakdown voltage makes it ideal for such applications. It can also be used in power supply circuits, due to its low power consumption, low gate charge and low switching losses. This makes it an ideal choice for green energy applications.

Working Principle

MOSFETs are operated in three modes: cutoff, linear, and saturation. In the cutoff mode, the gate voltage is less than the threshold voltage, so the drain-source current is very low. In the linear mode, the gate voltage is between the threshold voltage and the pinch-off voltage, giving a drain-source current that is proportional to the gate voltage. In the saturation mode, the gate voltage is greater than the pinch-off voltage, giving a high drain-source current. This high current is limited only by the power dissipation of the MOSFET.

The FQPF6N80CT has an on-resistance of 70mΩ at a gate-source voltage of 10V. This is suitable for most applications that require a high current flow with low losses. The FQPF6N80CT also has a low gate charge of 6.9nC, making it ideal for applications that require high-frequency switching with low switching losses.

Conclusion

The FQPF6N80CT is a n-channel MOSFET, providing excellent performance for a wide range of applications. It has a high breakdown voltage and low on-resistance, making it suitable for motor control, audio, and lighting applications. It also has a low gate charge and low switching losses, making it ideal for high-frequency switching applications such as power supplies.

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