FQPF44N10

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The FQPF44N10 is a n-channel enhancement mode MOSFET.

As part of Field Effect Transistors (FETs), a MOSFET comprises a source, drain, and gate electrode, wherein a reverse bias between the gate and the source creates a depletion region preventing current flowing between the source and the drain. The reverse bias voltage triggers a current flow between the source and drain, allowing the MOSFET to be used as a switch.

As an Enhancement mode MOSFET, FQPF44N10 has a threshold voltage of 4 V and a withstand voltage of 40 V. It is built on a 200/400/800 mΩ technology platform. It has an extremely low on-resistance of 44 nΩ, exceptionally low capacitance and low threshold voltage of 4 V.

FQPF44N10 is widely used in a variety of high-speed switching applications that demand precision and high efficiency. Its high on-state current carrying capacity, low on-resistance, and superior switching performance make it suitable for applications such as ultra-fast education, low-noise audio switching, Class-D audio amplifiers, high power inverters and switching power supplies, and motor control applications.

The working principle of FQPF44N10 is based on the phenomenon of induced electrostatic field commonly encountered in semiconductor materials with a floating gate. The induced electrostatic field is generated when the gate is positively charged, causing an inversion channel to form between the source and the drain.

The FQPF44N10 is configured such that when a positive voltage is applied to the gate, the current flowing from the source to the drain is controlled by the threshold voltage. When the gate voltage is increased, the current is increased, and the MOSFET is said to be in the enhancement mode. The reverse scenario, when the gate voltage is decreased, reduces the current flowing from the source to the drain. Thus, the MOSFET is said to be in depletion mode. This is the working principle of a MOSFET.

The FQPF44N10 MOSFET is a highly reliable electrostatic field effect transistor, which has a wide range of applications in various high-speed switching operations and offers superior switching performance, high current carrying capacity and excellent thermal and electrical conductivity. With its low threshold voltage, superior switching performance and high on-state current carrying capability, the FQPF44N10 is the ideal choice for applications requiring precise, high-speed switching operations.

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