FQPF44N08T

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	41W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1430pF @ 25V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	50nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	34 mOhm @ 12.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	25A (Tc)
Drain to Source Voltage (Vdss):	80V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FQPF44N08T MOSFET is a type of high-voltage, low-channel-resistance, insulated-gate field-effect transistor (IGFET) that has a wide range of applications in industrial, commercial, and consumer electronics.The FQPF44N08T MOSFET works on the principle of minority-carrier injection. When a voltage difference is applied across the drain and source terminals of the MOSFET, electrons are injected into the conduction channel, depleting the current through it and turning off the device. This principle is also known as the "Gunn effect." This type of MOSFET is well-suited for high-voltage switching applications due to its low on-channel resistance, making it ideal for switch-mode power supplies, high-voltage amplifiers, and high-frequency oscillators.The FQPF44N08T MOSFET also has a high coating resistance and breakdown voltage. Its maximum source-drain voltage is rated at 600 volts, and its high capacitance characteristics make it suitable for various switching applications. Additionally, its low drain-source capacitance and low input capacitance allow for fast switching operation. It is also able to handle large currents and has a low on-state resistance, making it ideal for high-current, low-voltage switch-mode power supply applications.The FQPF44N08T MOSFET is available in a variety of packages, including through-hole, SMD, and tape and reel. Its low internal capacitance makes it suitable for switching applications in low-noise environments. It also meets JESD 200 standards, which ensures that proper performance and reliability in switching applications.The FQPF44N08T MOSFET is typically used in automotive, aerospace, and communications applications, as well as industrial and security systems. It is used in a variety of power supply circuit designs, including DC-DC converters, switched-mode supplies, and uninterruptible power supplies. It can also be used in LED lighting and solar power systems.The FQPF44N08T MOSFET is a versatile component that can be used for many different applications due to its wide range of features and specifications. It is important to ensure that the component is able to handle the voltages and currents necessary for the application, and that its specifications are observed. With its low-channel resistance, high coating resistance, and high-voltage breakdown characteristics, the FQPF44N08T MOSFET is an ideal component for many industrial, commercial, and consumer electronics applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description