Allicdata Part #: | FQPF11N50CF-ND |
Manufacturer Part#: |
FQPF11N50CF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 11A TO-220F |
More Detail: | N-Channel 500V 11A (Tc) 48W (Tc) Through Hole TO-2... |
DataSheet: | FQPF11N50CF Datasheet/PDF |
Quantity: | 271 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 48W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2055pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 55nC @ 10V |
Series: | FRFET® |
Rds On (Max) @ Id, Vgs: | 550 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FQPF11N50CF is a type of enhancement mode Field Effect Transistor (FET) that belongs to the MOSFET (Metal Oxide Semiconductor FET) family. It is a single FET that is commonly utilized in applications requiring low on-state resistance and high switching speeds, such as automotive power switching and motor control.
The FQPF11N50CF has a package size of 4.0mm x 6.5mm with SOT-723 PowerPAK Leadless package, and a drain current of 11A (Id) with a continuous drain source voltage of 50V (Vds). It features ultra-low on-resistance (Rds(on)) which minimizes power losses and improves switching efficiency. The FQPF11N50CF also has a fast switching and low gate charge (Qg) which enables more power conversion and more efficient motor control.
The FQPF11N50CF has a number of standard applications, including power factor correction (PFC) for AC/DC power converters, brushless DC motor control, regulatory lighting, ac adapters or power supplies, and power control in digital televisions.
The working principle of the FQPF11N50CF is relatively straightforward. In its most basic form, the FQPF11N50CF is made up of two regions: the source and the drain, separated by a thin semiconductor material. When the gate (input) voltage is increased, the FET is turned on and the source-drain current (Id) increases. As the Id increases, so does the voltage applied to the drain terminal. When the gate voltage is decreased, the FET is turned off and the source-drain current decreases to a very low level.
The use of FQPF11N50CF FETs in switch mode power applications requires the use of an external gate driver in order to achieve optimal performance. The FQPF11N50CF has a wide range of Gate Voltage threshold (Vgs) that provides for greater flexibility when setting the on/off behaviour. The gate driver supplies the FET with the correct amount of current, depending on the desired Id, which ensures that the FET is immediately switched on or off, as desired. The gate voltage (Vgs) and the gate current (Igs) must be adjusted to ensure that the FET is switched on or off at a consistent rate and not in an oscillating or "bouncing" fashion.
The FQPF11N50CF FET is an ideal choice for applications requiring low on-state resistance and high switching speed, such as automotive power switching and motor control. Its small package size and ultra-low on-resistance make it a highly versatile solution for a variety of power switching and motor control applications, as well as other switch mode applications.
The specific data is subject to PDF, and the above content is for reference
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