Allicdata Part #: | FQPF12P20XDTU-ND |
Manufacturer Part#: |
FQPF12P20XDTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 200V 7.3A TO-220F |
More Detail: | P-Channel 200V 7.3A (Tc) 50W (Tc) Through Hole TO-... |
DataSheet: | FQPF12P20XDTU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 470 mOhm @ 3.65A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.3A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQPF12P20XDTU is a derivative of a power Field-Effect Transistor (FET) known as an Insulated Gate Bipolar Transistor (IGBT). It is a single-level device voltage magnitude and serves as a power switching device, primarily used in AC installations.
This device has a low on-state resistance, helps protecting against transient spikes, has a maximum continuous drain-source current of 20A, and is capable of controlling loads up to 500V. The FQPF12P20XDTU is suitable for usage in a wide range of applications such as motor control, solenoid control, power converters, power switch applications, as well as AC power controllers.
These devices are designed for high frequency switching applications, with a maximum frequency rating of 1kHz. Therefore, FQPF12P20XDTUs are not typically used in commutation applications.
In regards to the working principle of the FQPF12P20XDTU, it relies on the capacitive control technology, which combines an insulated gate electrode, together with a silicone gate oxide, to help regulate a large amount of electrical current for low or moderate frequency AC or DC power control applications. When voltage is applied to the gate terminal, an electric charge is formed on the gate oxide, which, in turn, activates a pair of p+ and n+ regions.
The FQPF12P20XDTU has its cathode and anode connections arranged in the same terminal pins that are typically used in larger, power bulky IGBTs. The pins provide a low on-state resistance, at a range of 200K to 400K, which, combined with the device’s high-frequency switching capability of up to 1kHz, allows the FQPF12P20XDTU to perform as a robust power switch in a variety of applications.
Regarding its layout, the device is in a Compact Low Profile SO Series package, which is suitable for space-constrained boards. Moreover, it is designed for easy soldering. Indeed, this small power device offers a range of key features including low on resistance, fast switching frequency, controllable two-level switching, and low power consumption.
In conclusion, the FQPF12P20XDTU is a fast and durable single-level power switching device, built with a Compact Low Profile SO Series package, which helps regulate and act as the interface between a load and the power supply, allowing for efficient power control. It is perfectly suitable for high frequency switching applications such as power converters, motor control, solenoid control, AC power controllers, and many more.
The specific data is subject to PDF, and the above content is for reference
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