FQPF13N50T

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The FQPF13N50T is a high voltage, single N-channel MOSFET with a maximum drain source voltage of 500 volts, a maximum operating temperature of 150oC and a maximum drain current of 130A.

The FQPF13N50T is a popular choice for power supply design and its versatility makes it suitable for a range of applications including high power switching, motor control, consumer electronics, automotive and industrial applications. The FQPF13N50T is well suited for high voltage operations due to its remarkably low gate charge and turn-on time.

A MOSFET is a type of field-effect transistor (FET) that uses metal–oxide–semiconductor technology to control the electrical properties of a semiconductor material. It works as a switching device, allowing current to flow when the voltage applied to the MOSFET is high enough. MOSFETs are usually constructed from either p-type or n-type materials, with n-type devices operating in N-channel mode and p-type devices operating in P-channel mode.

The basic operation of a single N-channel MOSFET is based on the principle of bandgap potential. This principle states that an electric potential must be formed between the metal and the semiconductor material in order to allow current to flow through the device. This potential is called the gate-source voltage, or VGS. When this voltage is applied to the gate of the FQFP13N50T device, electrons across the metal-semiconductor junction begin to move and a channel is formed, allowing current to flow.

The FQPF13N50T device is usually driven using a voltage source type of driver. This type of driver supplies a voltage to the gate terminal to control the FQPF13N50T device. The voltage on the gate terminal is compared with the drain-source voltage and the FQFP13N50T device begins to conduct when the gate voltage exceeds the drain-source voltage by a certain amount of volts, called the threshold voltage.

In most applications, an external resistor is used to limit the current flowing through the FQFP13N50T gate. This resistor is referred to as the gate-drain resistor, or RDS. The gate-drain resistor is used to provide a stable voltage across the gate terminal and to prevent the gate-source voltage from rising too high or dropping too low, which can cause thermal runaway and device damage.

The FQPF13N50T device is also capable of operating in diode mode, where it acts as a rectifier. The voltage across the drain-source terminals is limited to the drain-source threshold voltage. This feature is useful in certain applications where a high breakdown voltage needs to be maintained and power dissipation needs to be minimized.

The FQFP13N50T is a versatile device capable of operating in both N-channel and P-channel modes and can be used in a wide range of applications, including high power switching, motor control, consumer electronics, automotive and industrial applications.

Due to its low gate charge and fast switching capability, the FQPF13N50T is a popular choice for power supply design and other uses in which power and speed are of the essence. Its low gate charge also makes it well suited for high voltage operation.

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