FQPF15P12

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Field Effect Transistors (FETs) are a type of transistor that relies on an electric field to control the conductivity from one region of the device to another. The FQPF15P12 is a single-gate FET designed for signal switching, signal switching driver and logic-level control applications. It is housed in a small surface-mount package, making it ideal for applications where size and weight are key criteria.

The FQPF15P12 is built around a P-channel MOSFET, based on the field-effect principle. It is composed of five elements: a gate electrode, two source electrodes, and two drain electrodes. The application of a voltage between the source and the gate creates an electric field that controls the current flowing between the source and the drain. The FQPF15P12 operates in saturation mode most of the time, meaning that the source and the drain current are equal. When the gate voltage is increased, the source-drain current flow increases as well. When the gate voltage is reduced, the source-drain current is reduced.

The FQPF15P12 has a threshold voltage of 1.2V. When the gate voltage falls below the threshold voltage, the FET is switched off and no current can flow. This allows for simple logic-level control of the switch, as once the gate voltage is below the threshold voltage, no current can flow and the switch is "off". This makes this FET an ideal choice for digital circuits that require low power dissipation, as no current is consumed when the FET is "off".

The FQPF15P12 is also very useful in applications where high switching speeds are required. It has a very low resistance when conducting current and a fast switching response time. This means that the FET can be used for high-speed applications, such as switching circuits, or for driving high-frequency signals. It is also used in switched-mode power supplies and other power control applications.

In addition, the FQPF15P12 is also used in RF (Radio Frequency) applications, as it provides good isolation between the source and the drain. This means it can be used to prevent signal leakage, or to provide signal switching between different frequency bands. The FET is also used in linear amplifiers and oscillators due to its low capacitance and excellent linear characteristics.

Overall, the FQPF15P12 is an ideal FET for both digital and RF applications. It has a low power dissipation, fast switching speed, and provides excellent isolation between the source and the drain. It is also very easy to use, and can be used in a number of different applications. As a result, it is a great choice for applications where size and weight are key criteria.

The specific data is subject to PDF, and the above content is for reference