Allicdata Part #: | FQPF17N08-ND |
Manufacturer Part#: |
FQPF17N08 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 80V 11.2A TO-220F |
More Detail: | N-Channel 80V 11.2A (Tc) 30W (Tc) Through Hole TO-... |
DataSheet: | FQPF17N08 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 115 mOhm @ 5.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11.2A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Description
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The FQPF17N08 is a high-performance, high-speed MOSFET (metal–oxide–semiconductor field-effect transistors) that is ideal for use in a wide range of applications. It operates as an insulation-gate Field-Effect Transistor (FET) and is designed to switch voltage, current, and power efficiently. It is widely used in various electronic systems such as power supplies, switching power regulators, audio amplifiers, and motor controllers. This article will explain the application field and working principle of the FQPF17N08.
Application Field of the FQPF17N08
The FQPF17N08 is a high-performance, high-speed MOSFET that is designed to switch high-voltage, high-current, and high-power signals efficiently. It is often used in power supplies, switching power regulators, audio amplifiers, and motor controllers. Due to its high-speed switching capability, the FQPF17N08 is able to provide the user with quick and efficient results. Additionally, its low input capacitance and low on-resistance make it a great choice for high-frequency applications. Furthermore, the FQPF17N08 has a very low gate capacitance and fast turn-on time, making it suitable for applications that require high-speed switching. The FQPF17N08 is a versatile MOSFET that can be used in a wide variety of applications.
Working Principle of the FQPF17N08
The FQPF17N08 is a single-ended, insulated-gate Field-Effect Transistor (FET). FETs work by controlling the flow of electrons throughout the device. Electrons are “drained” or “sourced” through a channel formed between source and drain regions, which can be activated and deactivated by changing the voltage on the gate terminal. When the gate voltage is at a low level, the channel is strongly attenuated and electrons can’t move through it, thus turning off the device. Conversely, when the gate voltage is high, the channel opens up, allowing electrons to flow freely, thus turning the device on. As the FQPF17N08 is an insulated-gate FET, it operates at relatively low voltages and with very low power consumption.
The FQPF17N08 is a versatile MOSFET with a wide range of applications. It is used in a variety of electronic systems due to its high-speed switching capability, its low input capacitance and low on-resistance, and its low gate capacitance and fast turn-on time. By controlling the flow of electrons through the device, the FQPF17N08 is able to efficiently switch high voltages, high currents, and high power signals. The FQPF17N08 is an ideal choice for applications that require high-speed switching and low power consumption.
The specific data is subject to PDF, and the above content is for reference
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