FQPF17N08L

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The FQPF17N08L is a Logic Level Mosfet ( Metal Oxide Semiconductor Field Effect Transistor ) with a drain-source breakdown voltage of 17 Volts, RDS(ON)s of 16 milli-ohms (typical) at VGS = 10 Volts, and a low gate charge of 3.2 nanocoulombs (typical). This type of MOSFET is suitable for a variety of applications, including switching, amplifying, and sensing.

In a MOSFET, there are two main regions: the Source and the Drain. In a MOSFET with a low drain-source breakdown voltage, the drain-source voltage (Vds) will start to increase while the current (Id) is held constant. As the voltage reaches its breakdown voltage, the current quickly rises and the voltage falls. This is known as the "avalanche" effect. In the case of the FQPF17N08L, the breakdown voltage is 17 Volts, making it suitable for devices powered by voltages up to 20 Volts.

Another important characteristic of the FQPF17N08L is its gate-to-source threshold voltage (Vgs(th)). This determines the gate voltage necessary to turn the transistor on, and stands at 4 Volts for the FQPF17N08L.� When the source-to-drain voltage (Vds) is above the gate-to-source voltage (Vgs) minus the gate-to-source threshold voltage (Vgs(th)), the device turns on and current passes from the source to the drain. In other words, the gate voltage required to turn the transistor on is equal to the drain-source voltage (Vds) plus the gate-to-source threshold voltage (Vgs(th)).

The gate-to-source threshold voltage (Vgs(th)) of the FQPF17N08L is also related to its RDS(on). When the gate-to-source voltage (Vgs) exceeds the threshold voltage (Vgs(th)), the resistance between the drain and the source, RDS(on), decreases. This is known as the "on-state" resistance, because the device is now conductively connected. As this resistance decreases, the current from the source to the drain is increased. The FQPF17N08L has a typical RDS(on) of 16 milli-ohms at VGS = 10 Volts.

The FQPF17N08L also has a low gate charge of 3.2 nanocoulombs (typical). This is the amount of charge required to turn the transistor on, and this value is important for applications that require quick switching times. The lower the gate charge, the quicker the device can turn on and off. The FQPF17N08L\'s low gate charge make it ideal for applications that require high switching speeds.

In summary, the FQPF17N08L is a Logic Level Mosfet ( Metal Oxide Semiconductor Field Effect Transistor ) with a drain-source breakdown voltage of 17 Volts, RDS(on)s of 16 milli-ohms (typical) at VGS = 10 Volts, and a low gate charge of 3.2 nanocoulombs (typical). The gate-to-source threshold voltage (Vgs(th)) of the FQPF17N08L is 4 Volts, and its RDS(on) decreases as the gate-to-source voltage (Vgs) exceeds this threshold voltage. Finally, its low gate charge makes it ideal for applications that require high switching speeds. The FQPF17N08L is suitable for a variety of applications, including switching, amplifying, and sensing.

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