| Allicdata Part #: | FQPF1P50-ND |
| Manufacturer Part#: |
FQPF1P50 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET P-CH 500V 1.03A TO-220F |
| More Detail: | P-Channel 500V 1.03A (Tc) 28W (Tc) Through Hole TO... |
| DataSheet: |  FQPF1P50 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220F |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 28W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 10.5 Ohm @ 515mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 1.03A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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FQPF1P50 is an FET type electronic component. It is a MOSFET, which has great advantages over BJT transistors in many applications. In this article, we will discuss the application field and working principle of the FQPF1P50. The FQPF1P50 is a single N-channel MOSFET with an on-state current rating of 50A and a drain-source voltage rating of 250V. It is used for high current, power switching, and voltage amplification applications. It is also found in various audio and mobile equipment, as well as high-speed switching and power management circuits. The FQPF1P50 is a depletion type MOSFET, which means that the gate-source voltage (VGS) must be negative for a conductive channel to exist between the source and drain. This turns the device off when VGS is zero or positive. The FQPF1P50 has an exceptionally low RDS(ON) rating of 0.02Ω and a fast switching speed of 15nS, making it ideal for high current, low voltage applications.The way a MOSFET works is based on the conduction of electrons between the source, drain and gate. When there is a difference in charge between the gate and the source, the MOSFET will "open", allowing electrons to flow freely from the source to the drain. As electrons move from the source to the drain, they will experience an electric field created by the gate voltage which will control the width of the conductive channel. As the gate voltage increases, the width of the channel increases, allowing more current to flow from the source to the drain.The FQPF1P50 is a logic level compatible MOSFET, meaning that it can be switched by supplying a logic level voltage to the gate. It is designed to be driven by a 3.3V or 5V logic signal, making it suitable for use with microcontrollers and other digital signal processing circuits. In summary, the FQPF1P50 is a single N-channel MOSFET with an exceptionally low RDS(ON) rating of 0.02Ω, a drain-source voltage rating of 250V, and a fast switching speed of 15nS. It is used for high current, low voltage applications, as well as power switching and voltage amplification applications.
The specific data is subject to PDF, and the above content is for reference
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