Allicdata Part #: | FQPF2N90-ND |
Manufacturer Part#: |
FQPF2N90 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 900V 1.4A TO-220F |
More Detail: | N-Channel 900V 1.4A (Tc) 35W (Tc) Through Hole TO-... |
DataSheet: | FQPF2N90 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 500pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 7.2 Ohm @ 700mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.4A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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A FQPF2N90 is a voltage driven field effect transistor (FET) composed of a single Polycrystalline-Silicon (Poly-Si) layer, which serves as the gate, contacted by source and drain electrodes. The FQPF2N90 has become increasingly popular due to its low on-resistance and low threshold voltages. This type of transistor is commonly used to handle pulse suppressing, biasing circuits, power conversion and motor control, as well as other applications.
Operation Principle:
FQPF2N90 semiconductor transistors are based on metal–oxide–semiconductor field–effect transistor (MOSFET) technology, which allows the flow of electric current between the source and the drain when the voltage at the gate electrode is greater than the threshold voltage. The FQPF2N90 uses a single Poly-Si layer, which serves as the gate, to control the flow of current between the source and the drain. When voltage is applied at the gate electrode, the electron tunneling movement of electrons between the source and the drain takes place, allowing current flow. This type of FET is characterized by low on-resistance and low threshold voltages.
Features:
- Low on-resistance: The low on-resistance and low threshold voltages of the FQPF2N90 reduce power loss and provide improved reliability.
- High speed switching: The FQPF2N90 offers fast switching, which can increase energy efficiency in many applications.
- High Temperature Stability:The FQPF2N90 has high temperature stability, allowing it to withstand extreme temperature cycles.
- Low costs: The FQPF2N90 is also cost-effective, allowing engineers to reap the benefits of MOSFET technology on a budget.
- Small footprint: The FQPF2N90 is a small component, which can reduce the size and cost of the design.
Applications:
Due to its small size, low on-resistance, and low threshold voltages, the FQPF2N90 has become popular as an efficient, low-cost choice for many applications. These applications include:
- Power conversion: The FQPF2N90 is used in DC-DC converters, UPS systems, and Personal Computers.
- Motor control: The FQPF2N90 is used in motor controllers, such as brushless DC motors and servo controllers.
- Power Supply design: The FQPF2N90 is used in power supply designs where efficient pulse suppression is required.
- Power Switching: The FQPF2N90 is used in power switches, such as relay drivers and power-MOSFET drivers.
- Automotive Audio: The FQPF2N90 is used in audio systems, such as car stereos and amplifiers.
Conclusion:
In conclusion, the FQPF2N90 is an efficient and low-cost single-flux transistor with wide range of applications. It offers a range of features such as low on-resistance, high speed switching, high temperature stability, low cost, and small footprint. These features make the FQPF2N90 an ideal choice for designers and engineers looking for a reliable and cost-effective solution for their design needs.
The specific data is subject to PDF, and the above content is for reference
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