FQPF4N80

FQPF4N80 is a vertically-structured power Field-Effect Transistor (FET), often referred to as a SuperFET. It has been specially designed for use in a number of different power applications, such as motor control, DC-DC converters, deflection circuits and the powering of LED lighting systems. This FET is capable of handling a wide range of input voltages – from 600V down to 12V – and can deliver up to 80A in a single device.

The FQPF4N80 is constructed using a very shallow diffused double-polysilicon N-channel process and utilizes a vertical perimiter-strap structure for the current path. This construction greatly reduces the conduction and switching losses and allows the FET to deliver 90% high efficiency when driving motor loads.

The FQPF4N80 is very different from conventional power FETs, because it has an integrated reverse-blocking layer which makes it ideal for use as a protection device against reverse voltages. This device also features a fast switching time, which allows it to be used in high-frequency circuits with tight timing requirements. The FQPF4N80 is also reverse biased safe operating area (RBSOA) protected, which means it can handle large amounts of current without damage.

The primary working principle of the FQPF4N80 is that a two-contacted gate allows it to control the condition of a three-dimensional region at the FET\'s Line-end (source), known as the Source region. As the Source region is tuned through the gate, the density of electrons become natively enriched or depleted. This results in an increase or decrease of current flow between two levels depending on the applied voltage. Therefore, when an appropriate voltage is applied to the gate, the Source is able to switch to either conductive or non-conductive states, allowing current to flow or not.

The FQPF4N80 can be applied to a variety of power-related purposes such as motor control, DC-DC converters and LED lighting systems. The integrated reverse-blocking layer allows it to be used as a protection device against reverse voltages. It is also able to handle high currents and fast switching times, making it ideal for high-frequency circuits with tight timing requirements. By utilizing its shallow diffused double-polysilicon N-channel process and vertical perimiter-strap structure, the FQPF4N80 can deliver up to 80A in a single device – making it an ideal choice for a range of power applications.