FQPF5N20 Allicdata Electronics
Allicdata Part #:

FQPF5N20-ND

Manufacturer Part#:

FQPF5N20

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 200V 3.5A TO-220F
More Detail: N-Channel 200V 3.5A (Tc) 32W (Tc) Through Hole TO-...
DataSheet: FQPF5N20 datasheetFQPF5N20 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 32W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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FQPF5N20 is a N-Channel MOSFET that is frequently used for power switching applications. It is one of the most popular FETs (Field Effect Transistors) available today, with its excellent specifications for voltage, current, and power. This article will explore the applications of FQPF5N20 and its working principle.

FQPF5N20 is an ideal switch for low voltage and high current loads. It is ideally suited for use in audio amplifiers, DC-DC converters, and other power control or switching applications. It has low gate threshold voltage, which ensures that it remains off when the gate voltage is low, allowing it to be used for low power applications. It also has excellent thermal stability and can handle higher power loads compared to other FETS.

In power switching applications, FQPF5N20 can be used as an on/off switch for various loads. It operates on the principle of enhancement-mode operation of the FET, meaning that it needs a higher gate voltage than the source voltage to switch it on. Thus, when the voltage at the gate is low, the FET will remain off. When a higher gate voltage is applied, the FET turns on, allowing current to flow.

The maximum drain-source voltage of FQPF5N20 is rated at 20V, and it can handle currents of up to 10A. This makes it ideal for power switching applications, as it can be used to control large amounts of current and is less likely to overheat or be damaged. It has a very low on-resistance of just 40mΩ, meaning that it can operate with minimal loss of energy.

FQPF5N20 can also be used in applications where fast switching is required. It is capable of switching on and off very quickly, allowing for fast response times. This makes it ideal for high-speed switching applications, such as data transmission and motor control.

FQPF5N20 is also used in RF power amplifiers, where its low on-resistance and high current capability make it perfect for amplifying high-frequency signals. Its low Gate-Source Capacitance means that it can operate at higher frequencies with minimal loss of energy.

Overall, FQPF5N20 is an excellent choice for power switching and switching applications. Its low on-resistance, high current and voltage ratings, and fast switching capabilities make it the perfect choice for a wide variety of applications. Its low gate-source capacitance also makes it ideal for high frequency signals, making it a great choice for amplifiers and other applications.

The specific data is subject to PDF, and the above content is for reference

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