FQPF5N60C_F105

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	33W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	670pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	19nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	2.5 Ohm @ 2.25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	4.5A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction

FQPF5N60C_F105 is a power field effect transistor (FET) manufactured by Fairchild Semiconductor. It is used in power converters, amplifiers, and high power switching applications. It has a maximum drain current of 5.7A and a breakdown voltage of 500V. It can also operate at speeds up to 160MHz and is designed for use in low voltage, low current applications.

Application Field

The FQPF5N60C_F105 is mainly used in various applications such as switching power supplies, high power amplifiers, motor control, and more.For switching power supplies, the FQPF5N60C_F105 can be used as a switch to open and close the power circuits. It allows for high frequency switching, high efficiency and power conversion, and low electromagnetic interference (EMI). The device also operates at a higher switching frequency than other FETs, which results in a significantly reduced output voltage ripple.For high power amplifiers, the FQPF5N60C_F105 can be used to create high power audio systems. It can also be used as an amplifier in radio, TV, or audio receivers. Its high power switching capability makes it useful for driving high power speakers, while its low input capacitance makes it ideal for high speed switching.The FQPF5N60C_F105 can also be used in motor control applications. Its high speed switching and low input capacitance enable precise control of brushless DC motors. It also has low gate capacitance, which ensures a fast response time for the motor control.

Working Principle

The FQPF5N60C_F105 is a Power Field Effect Transistor (FET), which is a type of transistor used for the control and delivery of electric power. The device is composed of three branches: source, gate, and drain. It works by using the impedance characteristics of an electric field to create an electric current between the source and drain terminals.The gate terminal is used to control the electric current between the source and drain terminals. By applying a voltage to the gate terminal, a current can be induced between the source and drain terminals. This current can then be controlled by adjusting the voltage applied to the gate.The FQPF5N60C_F105 is highly efficient and with its high current and breakdown voltage rating, it is ideal for many applications. Its low input capacitance ensures high speed switching and its low gate capacitance ensures a fast response time.

Conclusion

The FQPF5N60C_F105 is an excellent choice of transistor for high power switching applications. It has a high breakdown voltage, a high current rating, and can operate at speeds up to 160MHz. It is also highly efficient and has low on-resistance and gate capacitance. This makes it ideal for use in switching power supplies, high power amplifiers, motor control, and more.

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