Allicdata Part #: | FQPF6N90CT-ND |
Manufacturer Part#: |
FQPF6N90CT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 900V 6A TO-220F |
More Detail: | N-Channel 900V 6A (Tc) 56W (Tc) Through Hole TO-22... |
DataSheet: | FQPF6N90CT Datasheet/PDF |
Quantity: | 1000 |
Series: | QFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 900V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2.3 Ohm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1770pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 56W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220F |
Package / Case: | TO-220-3 Full Pack |
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The FQPF6N90CT is a N-channel enhancement-mode field effect transistor (FET) that belongs to a group of FETs known as metal-oxide-semiconductor FETs (MOSFETs). The FQPF6N90CT is the single component made available in this category. It is fabricated in a high-quality silicon epitaxial substrate using industry-standard 65-nm CMOS technology. This component has a 12V gate to source voltage and a 12V drain to source voltage rating. The current running through the component has a maximum limit of 90A.
The FQPF6N90CT is suitable for a variety of applications. It is commonly used in low-power switching and amplifier circuits. It can also be used in automotive systems that require power switching operations. The component is also used in communications and computer systems, which rely heavily on the efficient power switching performance of this component. It can be used for applications that require up to 90A switching current. This makes it a great choice for applications such as low-voltage lighting systems and automotive electronics.
The working principle of the FQPF6N90CT is similar to other MOSFETs. The component is composed of two metal-oxide-semiconductor layers. The source is connected to the metal gate and the drain is connected to the semiconductor. The gate voltage controls the current flow through the component by controlling the height of the energy barrier between the source and drain. When the gate voltage is increased, the energy barrier is increased, reducing the current flow through the component. When the gate voltage is decreased, the energy barrier is decreased, allowing an increased current flow.
The FQPF6N90CT is designed to operate in a wide range of temperatures and is capable of withstanding harsh conditions. Its package is designed to provide excellent thermal performance and is capable of handling excess heat produced by the component. The component also features a low gate charge and a low input capacitance, which help reduce power losses in applications. Furthermore, it features an optimized on-resistance that ensures that the component operates efficiently with minimal power losses.
The FQPF6N90CT is a versatile component that can be used for a variety of applications. Its low on resistor enables efficient power switching for applications that require up to 90A of current. Its package is designed for excellent thermal conductivity and can handle any excess heat generated by the component. Furthermore, its low gate charge and low input capacitance helps reduce power losses and improves performance. All these features make this component an ideal choice for applications such as low voltage lighting systems, automotive electronics and communications systems.
The specific data is subject to PDF, and the above content is for reference
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