| Allicdata Part #: | FQPF9N25C-ND |
| Manufacturer Part#: |
FQPF9N25C |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 250V 8.8A TO-220F |
| More Detail: | N-Channel 250V 8.8A (Tc) 38W (Tc) Through Hole TO-... |
| DataSheet: |  FQPF9N25C Datasheet/PDF |
| Quantity: | 614 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220F |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 38W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 710pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 430 mOhm @ 4.4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8.8A (Tc) |
| Drain to Source Voltage (Vdss): | 250V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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FQPF9N25C is a type of power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is used in many applications like power management and power amplifiers. The following is an overview of the FQPF9N25C application field and working principle.
Application Field
The FQPF9N25C is an N-Channel MOSFET which is suitable for use in switching applications. It can be used to control the flow of current in the circuit by its voltage input. It is suitable for controlling high-power loads like relays, motors, solenoids and LEDs. It can also be used to control the speed of electric motors. Additionally, it can be used in linear applications like audio circuitry and voltage regulation.
Working Principle
The FQPF9N25C is a three terminal device. The gate terminal is the control terminal which is used to control the voltage input. This input voltage determines the current in the device. The source and drain terminals are the output terminals which determine the current flow through the transistor. The voltage between the two terminals determines the current flow.
The FQPF9N25C has an on-resistance of 25 ohms and it can be used for switching up to 9A of current. It can operate from a very low voltage of just 2V up to a maximum voltage of 40V. It has a high efficiency and low power consumption.
The FQPF9N25C has a very fast switching speed, which helps in providing fast response times. It also has low gate charge which helps to reduce energy losses and improves the efficiency of the circuit.
The FQPF9N25C has a very low gate-to-drain capacitance which helps in providing high frequency operation. It is also very stable over a wide temperature range.
In summary, the FQPF9N25C is a very versatile power MOSFET which has a wide range of applications. It has a fast switching speed, high efficiency, low power consumption and a low gate-to-drain capacitance. It can be used to control the flow of current in many circuits, making it an invaluable component in power management and power amplifiers.
The specific data is subject to PDF, and the above content is for reference
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