
Allicdata Part #: | FQPF9N25CT-ND |
Manufacturer Part#: |
FQPF9N25CT |
Price: | $ 0.99 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 250V 8.8A TO-220F |
More Detail: | N-Channel 250V 8.8A (Tc) 38W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 623 |
1 +: | $ 0.90090 |
10 +: | $ 0.79821 |
100 +: | $ 0.63082 |
500 +: | $ 0.48922 |
1000 +: | $ 0.38623 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 38W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 710pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 430 mOhm @ 4.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.8A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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FQPF9N25CT is a high-performance N-Channel Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). It is a single-field effect transistor (FET) and has been widely used in various applications. It combines advanced silicon-on-insulator (SOI) technology which provides a good balance between electrical performance and reliable operation in harsh environmental conditions.
The working principle of FQPF9N25CT is based on its gate terminal. It has an insulated gate that controls the flow of electrons or holes between the source and the drain regions. The gate terminal is used to control the turn on or off the transistor. When the gate terminal is given a positive voltage, it turns on the transistor and the drain current starts to flow. On the other hand, when the gate terminal is given a negative voltage, it turns off the transistor.
FQPF9N25CT transistors can be used in various applications where a low-power, high-current MOSFET is required. It is commonly used for power switch and power management applications, such as motor control, actuators, and voltage regulator. Other applications include high-speed switching, LED lighting, and analog circuits. Moreover, FQPF9N25CT can be used for general-purpose switching, battery-powered systems, LCD backlighting, and hot plug control.
FQPF9N25CT also has excellent electrical characteristics. It has low capacitance and a low gate charge. It has a breakdown voltage of 25V, which makes it suitable for a wide range of applications. It also has a low Ron resistance which provides low on-state resistance and good thermal performance. Furthermore, it has low gate input resistance, which reduces power dissipation due to parasitic capacitance.
Overall, FQPF9N25CT is a high-performance N-Channel MOSFET. It has excellent electrical performance and is suitable for various applications that require a low-power, high-current MOSFET. It can be used for power switch and power management applications, as well as for general-purpose switching, battery-powered systems, LCD backlighting, and hot plug control.
The specific data is subject to PDF, and the above content is for reference
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