Allicdata Part #: | IPB180N04S4LH0ATMA1-ND |
Manufacturer Part#: |
IPB180N04S4LH0ATMA1 |
Price: | $ 1.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH TO263-7 |
More Detail: | N-Channel 40V 180A (Tc) 250W (Tc) Surface Mount PG... |
DataSheet: | IPB180N04S4LH0ATMA1 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.23096 |
Vgs(th) (Max) @ Id: | 2.2V @ 180µA |
Package / Case: | TO-263-7, D²Pak (6 Leads + Tab) |
Supplier Device Package: | PG-TO263-7-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 24440pF @ 25V |
Vgs (Max): | +20V, -16V |
Gate Charge (Qg) (Max) @ Vgs: | 310nC @ 10V |
Series: | Automotive, AEC-Q101, OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 1 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 180A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IPB180N04S4LH0ATMA1 is a high voltage-capable, fast switching N-channel MOSFET that is primarily used in applications requiring a high level of power and performance. This type of MOSFET is known for its ability to quickly and efficiently switch between conduction and non-conduction states, making it ideal for high-power applications. In addition, the IPB180N04S4LH0ATMA1 has a wide range of temperature and voltage requirements, making it a versatile choice for a variety of applications.
The primary application field of the IPB180N04S4LH0ATMA1 is motor control and power management. This MOSFET is designed to provide a fast response time to quickly switch between conducting and non-conducting states, allowing for accurate and reliable motor control. Additionally, the high voltage capabilities of the IPB180N04S4LH0ATMA1 make it well suited for power management, as it can effectively handle higher electrical loads with minimal power loss.
The working principle of the IPB180N04S4LH0ATMA1 starts with its construction. Like other MOSFETs, it consists of three terminals: the gate, drain, and source. These terminals are connected to a field effect transistor (FET) where a voltage is applied to the gate of the FET. This voltage creates an electric field that changes the shape of the electric field of the FET, which in turn affects its conductivity. The change in conductivity allows current to flow between the source and the drain of the MOSFET.
When operating, the IPB180N04S4LH0ATMA1 will rapidly switch between conducting and non-conducting states. This is done based on the voltage between the gate and the source. When the voltage between the gate and the source is below a certain threshold, the MOSFET will switch to a non-conducting state and will stop current from flowing. When the voltage crosses this threshold, the MOSFET will switch to a conducting state and will allow current to flow between the source and the drain.
In conclusion, the IPB180N04S4LH0ATMA1 is a high voltage-capable, fast switching N-channel MOSFET well suited for applications requiring a high level of power and performance. Its main application fields are motor control and power management, due to its fast response time and high voltage capabilities. The IPB180N04S4LH0ATMA1 works by rapidly switching between conducting and non-conducting states based on the voltage between its gate and source, allowing current to flow or not, depending on the voltage applied.
The specific data is subject to PDF, and the above content is for reference
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