Allicdata Part #: | IPB120N04S3-02TR-ND |
Manufacturer Part#: |
IPB120N04S3-02 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 120A TO263-3 |
More Detail: | N-Channel 40V 120A (Tc) 300W (Tc) Surface Mount D²... |
DataSheet: | IPB120N04S3-02 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 230µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 14300pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 210nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 2 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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Different transistor technologies exist and offer the user a variety of application types. Power MOSFETs are a type of Field Effect Transistor (FET). The IPB120N04S3-02 model is a Power MOSFET from Infineon Technologies. It is specifically designed for use in DC/DC conversion applications.
Application Field
The IPB120N04S3-02 is a MOSFET designed specifically to operate at 40V. This model is designed and optimized for power management in laptop or tablet computer systems. It is suitable for use in a variety of computer applications such as quick charging, requiring a fast and safe charging process. The IPB120N04S3-02 MOSFET also has low on-resistance, which makes it highly efficient in DC/DC conversion applications.
The MOSFET is ideal for use in many different types of switching power supplies, including notebook and industrial power supplies. It is also suitable for use in low and high power switching, as well as battery charging and management systems. Furthermore, it is suitable for use in many kinds of light and shadow control applications.
Working Principle
As Field Effect Transistors (FETs), MOSFETs operate not by movement of current, but by movement of electrons. The IPB120N04S3-02 model has an internal gate which is used to control the flow of electrons from the source to the drain. When the electric current through the gate is increased, a larger number of electrons can flow, which increases the MOSFETs current carrying capacity. Similarly, when the electric current through the gate is decreased,the number of electrons that can flow is decreased, and the current carrying capacity of the MOSFET decreases.
MOSFETs can be used as switches or amplifiers due to the fact that they are highly capable of controlling the flow of electrons. The IPB120N04S3-02 has an on-resistance of 3.1mΩ, making it ideal for providing very high switching frequencies for applications requiring fast switching as well as low power loss.
The IPB120N04S3-02 Power MOSFET also has a low gate charge, which makes it suitable for efficient charging and discharging of large battery banks. This MOSFET is also rated to operate at an ambient temperature of -55°C to 150°C, making it suitable for many different types of applications.
Conclusion
The IPB120N04S3-02 MOSFET is a highly efficient and reliable transistor, being specifically designed for a wide range of applications, ranging from notebook and industrial power supplies to light and shadow control systems. This MOSFET is also designed to operate at 40V and has an on-resistance of 3.1mΩ. It also has a high current carrying capacity due to its low gate charge and is rated to operate at an ambient temperature range of -55°C to 150°C.
The specific data is subject to PDF, and the above content is for reference
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IPB160N04S2L03ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 160A TO26... |
IPB16CN10N G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 53A TO26... |
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IPB180N04S4H0ATMA1 | Infineon Tec... | 1.11 $ | 1000 | MOSFET N-CH 40V 180A TO26... |
IPB100N06S3L-03 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 100A TO26... |
IPB14N03LAT | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 30A D2PAK... |
IPB100N06S3-03 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 100A D2PA... |
IPB10N03LB | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 50A D2PAK... |
IPB10N03LB G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 50A D2PAK... |
IPB11N03LA | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 30A D2PAK... |
IPB11N03LA G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 30A D2PAK... |
IPB13N03LB | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 30A D2PAK... |
IPB14N03LA G | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 30A D2PAK... |
IPB14N03LA | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 30A D2PAK... |
IPB120N04S3-02 | Infineon Tec... | -- | 1000 | MOSFET N-CH 40V 120A TO26... |
IPB120N06S402ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 120A TO26... |
IPB120N06S403ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 120A TO26... |
IPB120N06S4H1ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 120A TO26... |
IPB180N06S4H1ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 180A TO26... |
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IPB160N04S203ATMA4 | Infineon Tec... | 1.13 $ | 1000 | MOSFET N-CH 40V 160A TO26... |
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