IPB180N06S4H1ATMA1

IPB180N06S4H1ATMA1 is the part number of a n-channel MOSFET offered by Infineon Technologies. This discrete semiconductor device is widely used in applications such as switching, voltage regulation, power management, and low-noise analog amplifiers. It is integrated into circuits with a variety of microcontrollers, digital systems, and analog circuits to provide higher current and greater power efficiency.

MOSFET stands for Metal Oxide Semiconductor Field-Effect Transistor, which is a type of transistor commonly used in modern electronics. It is a three-terminal device, meaning that it consists of a source, a drain, and a gate. It has the advantage of being able to switch high currents without having to dissipate large amounts of power. This makes it ideal for applications where high currents need to be controlled without significantly increasing power consumption.

The IPB180N06S4H1ATMA1 is a 30-Volt n-Channel MOSFET which can handle a maximum drain-source voltage of 30V and a maximum drain current of 225A. It was designed for high-efficiency switching applications such as motor control, power factor correction, DC-DC converters, and lighting. This MOSFET has a low on-resistance of 0.044 ohms, enabling it to provide a low on-state voltage drop and minimal energy loss during switching. It also has a high-speed switching speed of 240V/ns, allowing for faster response times and improved performance.

The source and drain of the MOSFET are connected to the circuit with a source and drain contact. The gate is connected to the control circuit, which provides the voltage necessary to control the operation of the MOSFET. In an N-channel MOSFET, the electric field surrounding the gate is positive, reducing the resistance between the source and the drain and allowing current to flow through. Conversely, when the electric field is negative, the resistance between the source and the drain increases and current flow through the device is blocked.

The IPB180N06S4H1ATMA1 MOSFET is an ideal choice for applications that require high-efficiency switching, low power loss, and high-speed response times. It’s low on-resistance enables it to provide low voltage drops, making it suitable for applications that require low power consumption. Additionally, its high-speed switching capabilities make it ideal for applications where a fast response time is required.

In conclusion, the IPB180N06S4H1ATMA1 MOSFET is a suitable choice for applications requiring high-efficiency power management and switching. It features a low on-resistance and high-speed switching capabilities, making it an excellent choice for high-current applications. Additionally, it is an ideal solution for applications requiring low power consumption and fast response times.