IPB180N04S4H0ATMA1

IPB180N04S4H0ATMA1, also known as Infineon CoolMOS™ P6, is a N-channel enhancement mode MOSFET which uses CoolMOS™ technology for improved switching performance and high reliability.

Application Field

IPB180N04S4H0ATMA1 can be used in a variety of power management applications such as DC-DC converters, motor control, lighting ballasts and soft start applications in consumer products like portable units and TV\'s. It also has excellent thermal characteristics suitable for power factor correction, smoothing, and current-mode applications, especially in non-isolated buck converters. P6 technology offers a combination of low gate charge, low gate resistance, low thermal resistance and high current capability.

Working Principle

A MOSFET, an acronym for metal-oxide-semiconductor field effect transistor, is a type of transistor used in amplification and switching applications. It is composed of an insulated gate that assists in controlling an attached electrical channel. The electrical channel of the transistor is enabled or disabled as needed by positively or negatively influencing the gate through an electric field. When voltage is applied to the gate of a MOSFET, an electric field is created with the gate acting as an insulator. This electric field manipulates the conductivity of the MOSFET’s channel. This conductivity manipulation is at the heart of the transistor’s function. A transistor’s operating state is not defined by simply the amount of applied voltage to its gate, but also the threshold voltage of the MOSFET. The threshold voltage is the point at which the utility of the electric field surpasses that of the conductive channel and starts turning the transistor on. Therefore, the MOSFET\'s gate voltage must exceed a certain threshold voltage in order for the switch to be enabled.

IPB180N04S4H0ATMA1 uses the special CoolMOS™ technology which provides energy savings through high switching frequencies and low gate resistances, as well as low gate charge and low EMI emissions. P6 technology also ensures low thermal resistances, allowing the devices to run cooler than traditional MOSFETs. This increases the devices\' efficiency and reliability, extending their lifespans.