IPB100N06S2L05ATMA1 Allicdata Electronics
Allicdata Part #:

IPB100N06S2L05ATMA1TR-ND

Manufacturer Part#:

IPB100N06S2L05ATMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 100A TO263-3
More Detail: N-Channel 55V 100A (Tc) 300W (Tc) Surface Mount PG...
DataSheet: IPB100N06S2L05ATMA1 datasheetIPB100N06S2L05ATMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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The IPB100N06S2L05ATMA1 is classified as a Single MOSFET (Metal Oxide Semiconductor Field Effect Transistor). MOSFETs are power transistors, and they are the highest voltage devices among power semiconductor devices. This kind of transistor provides high blocking voltage, high switching frequency, and radiation-resistant performance, making them an ideal choice for applications such as high-power motor control, automation, and robotics.

The IPB100N06S2L05ATMA1 has a maximum drain drain voltage (Vdss) of 100V, a drain source current (Id) of 60A, and a gate to source voltage (VGS) of 30V, making it suitable for a wide variety of applications. It also has a low on state resistance, which makes it effective in power conversion and amplifier applications.

The operating principle of the Single MOSFET states that when a positive gate voltage is applied, an electric field appears in the channel between the source and the drain regions of the device, which reduces the resistance of the channel and allows a large current to flow from the source to the drain.

The IPB100N06S2L05ATMA1 has a wide range of application fields, from high-power motor control to audio amplifiers. It is also used in power converters, such as High Frequency Inductor-based Voltage Source Converters (VLF-VSCs) and AC to DC inverters, as it provides high blocking voltage, high switching frequency and radiation-resistant performance.

It can also be used in robotics and automation, as it allows for high-precision control over the switching of circuits. The ability to precisely control the switching of circuits is essential in robotics and automation, as it allows the robot to quickly and accurately adapt to changes in the environment.

The IPB100N06S2L05ATMA1 is a reliable and efficient transistor, making it an ideal choice for applications requiring a wide range of performance characteristics. Its low on-state resistance, high blocking voltage and radiation-resistant performance make it an excellent choice for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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