IPB180P04P4L02ATMA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IPB180P04P4L02ATMA1 is one of the most common types of a field-effect transistor (FET). By utilizing electric fields, FETs are able to transfer electrical charges from one terminal to another. This type of transistor is classified as a Enhancement-Mode Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). It is a single device, meaning it contains just one circuit-controlling MOSFET rather than multiple FETs in parallel or series.

IPB180P04P4L02ATMA1 has various applications as it is used in analog circuits and digital circuits. In an analog circuit, the device can be used as a voltage-controlled resistor or as a switch, which allows the user to control the amount of current flowing through the circuit. Similarly, an IPB180P04P4L02ATMA1 can be used in a digital circuit as a switch, or as a signal amplifier, depending on the specific application.

The working principle of an IPB180P04P4L02ATMA1 is based on the electric field principle. In this type of device, the electric field is generated by applying a voltage across two electrodes. This field is then used to control the flow of electrons from one terminal to the other. In a given circuit, the electric field can be used to control the timing of the circuit, or the amount of current flowing through the circuit. In either case, the transistor acts as a switch, controlling the amount of current that can flow through.

In addition to being used in analog and digital circuits, an IPB180P04P4L02ATMA1 can also be used in sensor applications. By monitoring a circuit, the IPB180P04P4L02ATMA1 can detect the presence or absence of a certain signal, or the level of a certain signal. This can then be used to control a process or even the entire circuit.

IPB180P04P4L02ATMA1 is a type of Enhancement-Mode MOSFET, meaning that it has a lower gate voltage than the source voltage when it is used in an analog circuit. This makes the IPB180P04P4L02ATMA1 ideal for low-voltage applications, as the gate voltage of the device can be used to control the amount of current flowing through the circuit without consuming as much power. Additionally, the fact that this device is single also means that it is more compact than its multi-FET counterparts.

In conclusion, the IPB180P04P4L02ATMA1 is a single Enhancement-Mode MOSFET. It is frequently used in analog circuits, digital circuits, and sensor applications due to its relatively low gate voltage and its ability to control the flow of electrical current. Additionally, its single-device design makes it more compact and power-efficient than many other types of FETs.

The specific data is subject to PDF, and the above content is for reference