IPB100N06S3-03

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IPB100N06S3-03 is a power MOSFET, which belongs to the Single category of the FETs and MOSFETs family. It is manufactured by Infineon and is equipped with several features and benefits that make it a suitable choice for both commercial and industrial applications.

The IPB100N06S3-03 is a N-Channel enhancement mode Mosfet designed for advanced power switching applications. Its high current and low on-state resistance combined with its high switching speed make this device suitable for high-speed switched-mode power supplies, PWM motor control, high-power motor supply, and lighting systems.

This MOSFET has a low on-state resistance of 0.033 Ohm and a maximum drain-to-source voltage rating of 100 V. It offers a high-speed switching time of 55 ns with a typical total gate charge of 13 nC and a typical thermal resistance of 2.8°C/W. It has a total drain-to-source junction capacitance of 1.5 pF making it suitable for high frequency applications.

The IPB100N06S3-03 is packaged in an TO-220AB package enabling it to be effectively electrically and thermally isolated from its surrounding environment. This makes it particularly suited for applications for which proper electrical safety is critical. It has an RoHS compliant leadless package with a lead-free finish that is compatible with higher temperature soldering.

The working principle of the IPB100N06S3-03 is based on a three-terminal voltage-controlled FET. It is controlled by a voltage on its gate terminal which is proportional to the output current on its drain terminal. The gate is considered to be the “control” terminal in the FET and is used to control the device’s operation.

When a voltage is applied to the gate, a channel is formed between the source and drain. This channel is what allows current to flow from the drain to the source. The resistance of the channel is proportional to the voltage applied to the gate, so the higher the gate voltage, the lower the resistance and the higher the drain current.

The IPB100N06S3-03 can be used in applications such as high-current power supply, switching power supplies, AC/DC rectifiers, DC/DC converters, and motor control systems. Its low on-state resistance makes it suitable for high power applications with low power losses. It is also capable of high-speed switching times, making it suitable for high-speed switching operations in complex switching power supplies and motor control systems. As well, its RoHS compliant leadless package with a lead-free finish allows it to be used in applications with higher temperature soldering requirements.

In conclusion, the IPB100N06S3-03 is a three-terminal voltage-controlled FET that is suitable for a wide range of commercial and industrial applications. It has a low on-state resistance, high-speed switching times, and a RoHS compliant lead-free package making it highly versatile and beneficial for various applications.

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