IPD135N08N3GBTMA1

Series:	OptiMOS™
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	80V
Current - Continuous Drain (Id) @ 25°C:	45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	13.5 mOhm @ 45A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs:	25nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1730pF @ 40V
FET Feature:	--
Power Dissipation (Max):	79W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO252-3
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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IPD135N08N3GBTMA1 is a type of field effect transistor (FET) that is widely used in power electronics applications. It is a single-gate MOSFET (metal-oxide-semiconductor field-effect transistor) with N-channel enhancement mode. It is designed for high-speed switching and power amplification applications in power electronic devices.The IPD135N08N3GBTMA1 is commonly used in several applications such as switching, power amplification and variable power supply. It is also used in automotive applications which requires high switching speeds and reliable operation. In addition, it can also be used for driving LEDs and power converters for high current, high voltage and high power operations. As such, the IPD135N08N3GBTMA1 is one of the most widely used components in the circuitry of today\'s automotive, aerospace and industrial technology.The working principle of IPD135N08N3GBTMA1 is very simple. It is fabricated using a metal oxide semiconductor (MOS) material and hence, the device is known as MOSFET. The device contains two terminals namely a gate and a source, and the N-channel enhancement mode defines the transistor\'s working principle. The gate is the controlling terminal for controlling the current flow and the source terminal is connected to the drain so that the current can flow from both sides of it.When a positive gate voltage is applied to the gate, it induces an electric field in the MOS material. This electric field increases electron concentration in the region close to the gate and thus forming an inversion layer. The positive voltage at the gate that decreases the access resistance of the MOS material and this reduces the barrier to current flow between the source and drain. This in turn increases the current between the two terminals and the device operates in the active region.On the other hand, when a negative gate voltage is applied to the gate, the electric field decreases and depletes the region close to the gate. This increases the barrier and thus reduces the current between source and drain and the device operates in the cut-off or off state.In summary, IPD135N08N3GBTMA1 is a type of single-gate MOSFET which is mainly used in power electronics applications. It is fabricated using an MOS material and works on the principle of N-channel enhancement mode. It is commonly used for switching, power amplification, voltage/power regulation and driving LEDs. Also, it is widely used in automotive, aerospace and industrial applications for its reliable and high speed operation.

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