IPD110N12N3GBUMA1 Discrete Semiconductor Products

IPD110N12N3GBUMA1 Application Field and Working Principle

The IPD110N12N3GBUMA1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies. This component is a high-voltage and high-speed switching device with excellent performance and medium level reverse recovery current. It is built in the standard TO-247 package and the device utilizes the advanced field-stop IGBT technology. This component is widely used in various inverter and converter applications.

IGBT Basic Principles

An IGBT is a three terminal semiconductor device, typically composed of two parts – a MOS gate and a bipolar junction transistor (BJT). Its structure includes three semiconductor layers which are formed into two distinct transistors. The gate is built with a p-channel MOS transistor, while the base is built with an n-channel BJT. This type of component is capable of efficiently operating in both AC and DC power systems.

When using an IGBT, a small voltage pulse is applied to the control gate. This voltage pulse changes the threshold voltage of the mos structure and allows it to conduct current. This current can then pass from the Drain to the Source without needing to exceed the threshold voltage. By controlling the voltage pulse, the resistance between the gate and the source can be controlled, allowing for efficient and reliable power conversion in applications that involve both AC and DC power supplies.

IPD110N12N3GBUMA1 Applications

The IPD110N12N3GBUMA1 is mainly utilized in industrial and automotive applications, due to its ability to reliably and effectively switch high power supplies. It is especially suitable for power converters, as it can handle current and faster increases in voltage with ease. Other applications include induction heating, motor control, PFC and UPS systems.

Additionally, this component is suitable for a variety of DC/AC applications, including solar panels and UPS systems. It is also used for high-voltage applications, such as for automotive and industrial power control circuits.

Conclusion

The IPD110N12N3GBUMA1 is an advanced Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, and it is built in a standard TO-247 package. It utilizes the advanced field-stop IGBT technology and is best suited for converter and inverter applications. It is suitable for both AC and DC power conversion, and is widely used in various industrial and automotive applications.