Allicdata Part #: | IPD122N10N3GATMA1TR-ND |
Manufacturer Part#: |
IPD122N10N3GATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 59A |
More Detail: | N-Channel 100V 59A (Tc) 94W (Tc) Surface Mount PG-... |
DataSheet: | IPD122N10N3GATMA1 Datasheet/PDF |
Quantity: | 1000 |
Series: | OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 59A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 12.2 mOhm @ 46A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 46µA |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2500pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 94W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO252-3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The IPD122N10N3GATMA1 is a commonly used single-area-enhanced metal oxide semiconductor field effect transistor (MOSFET). It is a Unipolar (BJT) on a single device and has a drain-source voltage of 100V, an on-state resistance of 0.23 Ω, a maximum RDS (ON) power dissipation rating of 175W, and an approximate switching frequency of 2MHz. As with most transistors, IPD122N10N3GATMA1 transistors can be used as amplifiers, switches, voltage regulators, and in non-linear circuits.
When using the IPD122N10N3GATMA1, a gate voltage is applied to the transistor, which creates a conductivity channel between source and drain. This channel acts as a sort of an electronic door, allowing the flow of electrons when opened. The magnitude of the current from source to drain is controlled by the gate voltage, so more voltage creates more current, and less voltage creates less current. The IPD122N10N3GATMA1 is designed to be particularly efficient and consume low power, making it a great choice for devices that need to save energy.
A MOSFET is not just an on-off switch, however. It can also be used to control the current or voltage in a circuit, and is often used as a linear amplifier, either on its own or in conjunction with other components. To use the IPD122N10N3GATMA1 as an amplifier, the gate voltage must be carefully adjusted to control the current flow, which will regulate the voltage or current in the circuit. When used as an amplifier, the IPD122N10N3GATMA1 can also provide a high level of accuracy, as the current or voltage is precisely controlled.
The IPD122N10N3GATMA1 is also often used in motor controllers, where precise speed control is needed. The gate voltage can be used to modulate the amount of current flowing in the motor, providing accurate and consistent speed control. This is particularly useful for applications such as drones, robotic arms, and other servo systems that require precise and accurate control.
In summary, the IPD122N10N3GATMA1 is an ideal choice for applications that need precise, energy efficient control of voltage and current. It can be used as a switch, amplifier, or motor controller, and is capable of providing precise, accurate control. As such, it is widely used in a variety of applications, ranging from consumer electronics to industrial automation.
The specific data is subject to PDF, and the above content is for reference
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