IPD50R500CEBTMA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPD50R500CEBTMA1 is a high performance single N-channel depletion-mode insulated gate field effect transistor (FET) manufactured by Infineon Technologies AG. This product is designed for high frequency applications, such as power management, high efficiency audio amplifiers, electronic motor control and power switches. This article will provide an overview of the IPD50R500CEBTMA1\'s application field and working principle.

Applications

The IPD50R500CEBTMA1 is an ideal device for power management applications. It has an integrated gate voltage protection circuit which allows it to be used as a switch in high frequency circuits, such as DC/DC converters, switching power supplies and DC motor control. Additionally, the device is suitable for use in high efficiency audio amplifiers, owing to its thermal, ESD and load-dump protection features.

The device\'s low on-resistance and high ESD rating make it an ideal choice for audio applications and other applications that require high performance and reliable operation. The device is also well suited for compact design applications as it is available in PowerDI523 and PowerDI1253 packages.

Working principle

An N-channel FET is a three terminal device, consisting of a source, a drain and a gate. It operates according to the principle of an insulated gate voltage controlled current passage between the source and the drain. The gate voltage determines the amount of current flows from the source to the drain. The source is typically biased at the supply voltage, while the gate voltage is applied externally, by means of a voltage source or a resistor.

When the gate is taken to a negative voltage with respect to the source, the FET goes into a "depletion mode". This results in a current conduction path between the source and the drain being established, allowing current to flow from the source to the drain.

The IPD50R500CEBTMA1 is an N-channel depletion mode FET, which operates according to this principle. The device has a gate threshold voltage of -1.5V and a drain-source on-resistance of 0.018 ohms. It also features an integrated gate voltage protection circuit, which limits the gate voltage to a maximum of 16V.

In addition, this device has a drain-source breakdown voltage of 500V and an Avalanche energy of less than 1mJ. These features make the IPD50R500CEBTMA1 an ideal choice for high frequency applications, such as audio amplifiers, DC/DC converters, power switches and motor control.

Conclusion

The IPD50R500CEBTMA1 is a high performance single N-channel depletion-mode insulated gate field effect transistor (FET) manufactured by Infineon Technologies AG. It is an ideal choice for power management applications, as it has an integrated gate voltage protection circuit and low on-resistance. It is also suitable for use in audio applications, owing to its thermal, ESD and load-dump protection features. The IPD50R500CEBTMA1 operates according to the principle of an insulated gate voltage controlled current passage between the source and the drain. This article has provided an overview of the device\'s application field and working principle.

The specific data is subject to PDF, and the above content is for reference