| Allicdata Part #: | IPD50N06S4L12ATMA1TR-ND |
| Manufacturer Part#: |
IPD50N06S4L12ATMA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 60V 50A TO252-3-11 |
| More Detail: | N-Channel 60V 50A (Tc) 50W (Tc) Surface Mount PG-T... |
| DataSheet: |  IPD50N06S4L12ATMA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2.2V @ 20µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | PG-TO252-3-11 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 50W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2890pF @ 25V |
| Vgs (Max): | ±16V |
| Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 12 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Tape & Reel (TR) |
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The IPD50N06S4L12ATMA1 is a high-performance switch which can be used for high-temperature and high-voltage operations, making it suitable for various applications, such as server, power distribution systems, solar panel, electric vehicle, and invertor. It offers a wide range of current levels and lower on-state resistance, which increases the efficiency of power handling. It has a low switching loss and low temperature rise, which also improves the efficiency. Additionally, it features a fast switching speed and low gate charge, which enables a faster switching and reduced power dissipation.
The working principle of IPD50N06S4L12ATMA1 is based on the silicon carbide (SiC) material. The SiC material has very good thermal and electrical properties and can handle very high voltages, making it ideal for power electronic applications. The IPD50N06S4L12ATMA1 is a type of power MOSFET which utilizes the vertical structure of a MOSFET to reduce the on-state resistance. The gate voltage is applied to the gate of the MOSFET and this voltage is used to turn on or off the device. When it is turned on, the drain-source voltage will drop, indicating that the device is in its on state. Conversely, when it is turned off, the drain-source voltage will be higher, indicating that the device is in its off state.
IPD50N06S4L12ATMA1 is a very important device for power electronic applications. It is used for various applications, such as server, power distribution systems, solar panel, electric vehicle, and invertor. Its high performance and reliable operation make it suitable for these applications. Additionally, its fast switching speed, low on-state resistance, and low gate charge increase the efficiency and reduce the power dissipation. The working principle of the device is based on the silicon carbide (SiC) material which has excellent thermal and electrical properties. This makes it suitable for applications requiring high voltages.
In conclusion, IPD50N06S4L12ATMA1 is a very important type of silicon carbide transistor that is used in power electronic systems in various application fields. It is suitable for high-voltage and high-temperature operations, making it suitable for various applications. Its low on-state resistance, fast switching speed, and low gate charge make it highly efficient and reduce power dissipation. Additionally, its working principle is based on the silicon carbide material, which has excellent thermal and electrical properties.
The specific data is subject to PDF, and the above content is for reference
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