| Allicdata Part #: | IPD5N25S3430ATMA1-ND |
| Manufacturer Part#: |
IPD5N25S3430ATMA1 |
| Price: | $ 0.25 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH TO252-3 |
| More Detail: | N-Channel 250V 5A (Tc) 41W (Tc) Surface Mount PG-T... |
| DataSheet: | IPD5N25S3430ATMA1 Datasheet/PDF |
| Quantity: | 1000 |
| 2500 +: | $ 0.22492 |
| Vgs(th) (Max) @ Id: | 4V @ 13µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | PG-TO252-3-313 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 41W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 422pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 6.2nC @ 10V |
| Series: | Automotive, AEC-Q101, OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 430 mOhm @ 5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
| Drain to Source Voltage (Vdss): | 250V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The IPD5N25S3430ATMA1 has become quite a popular device for many different applications, due to its low on-resistance and fast switching speed. It is a one-shot protection circuit that limits current and voltage in a single-ended power MOSFET (metal-oxide-semiconductor field-effect transistor) device. The device is one of the few that have been certified to the internationally recognized ISO9001:2015 standards.
The IPD5N25S3430ATMA1 has several key features and application fields in which it can be used. These include: over-current protection and thermal protection of power supply lines in power management/regulator circuits; single ended high side switches; current limiting protection circuits; and transient voltage protection.
Working Principle
The operation of the IPD5N25S3430ATMA1 can be divided into two modes: protection mode and normal operating mode. In the protection mode, the device operates in two stages. Initially, it will limit the joule heating effect caused by short circuit or overload current. This limits the resulting damage to the circuit components. Secondly, it will control the thermal heating within the circuit resulting from normal operating current.
In the normal operating mode, the device operates as a MOSFET device with the advantage that it can be controlled directly or indirectly. In addition, the device is protected from overvoltage due to its built-in zener clamp. This makes the device suitable for use in output voltage clamping applications.
Another important feature of the IPD5N25S3430ATMA1 is its high surge capability, which is achieved by using a low resistance MOSFET structure with a built-in diode protection circuit. The device is capable of withstanding high voltage transients up to 1500V, while still maintaining its current limiting capability.
IPD5N25S3430ATMA1 is a one-shot protection circuit with a two-stage protection operation. First, it limits the joule heating effect caused by short circuit or overload current. Secondly, it controls the thermal heating in the circuit. It also has a built-in zener clamp that provides overvoltage protection, and the device is capable of withstanding high voltage transients up to 1500V. The device is suitable for use in power management/regulator circuits, single ended high side switches, current limiting protection circuits, and transient voltage protection.
The specific data is subject to PDF, and the above content is for reference
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IPD5N25S3430ATMA1 Datasheet/PDF