
Allicdata Part #: | IPD50R1K4CEAUMA1-ND |
Manufacturer Part#: |
IPD50R1K4CEAUMA1 |
Price: | $ 0.14 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 500V 3.1A PG-TO-252 |
More Detail: | N-Channel 500V 3.1A (Tc) 42W (Tc) Surface Mount PG... |
DataSheet: | ![]() |
Quantity: | 1000 |
2500 +: | $ 0.12600 |
Vgs(th) (Max) @ Id: | 3.5V @ 70µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 178pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.2nC @ 10V |
Series: | CoolMOS™ CE |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 900mA, 13V |
Drive Voltage (Max Rds On, Min Rds On): | 13V |
Current - Continuous Drain (Id) @ 25°C: | 3.1A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IPD50R1K4CEAUMA1 is a single Field Effect Transistor (FET) device commonly used in a wide variety of applications. This semiconductor device has been designed to control the flow of electric current, allowing switch-based control of various electrical applications. It is available in both standard and custom models.
The IPD50R1K4CEAUMA1 is comprised of a silicon-rich n-type layer between two p-type layers, with a further n-type drain. It is surrounded by a gate dielectric layer, with a gate conductor that provides control of the conductive characteristics. These components are what makes this device well-suited for applications where current regulation is important.
In particular, the IPD50R1K4CEAUMA1 is designed to offer superior characteristics in the areas of linearity and low-noise operation as well as low power consumption. These are important for applications where current must be accurately adjusted, as well as for low power applications such as those found in battery-operated electronic devices. Additionally, due to its high gate breakdown voltage and gate capacitance characteristics, it is often used in high-frequency and high-voltage applications.
The working principle of the IPD50R1K4CEAUMA1 is similar to that of other FETs. A voltage applied to the gate terminal controls the conductivity of the device, affecting the current flow between the source and drain. Low voltages applied to the gate enable the current flow, whereas high voltages disable the flow. This is where the extremely low power consumption of the device comes in; it only draws a small current when a voltage is applied to the gate, allowing users to adjust the current flow as required while still consuming minimal power.
The IPD50R1K4CEAUMA1 is extremely versatile and can be used in a wide variety of applications, ranging from low voltage (1V) digital logic to high voltage (200V) motor control, photovoltaics, and power management. Other uses include automotive systems, LED displays, and high-speed communications.
This device is also widely used in the telecommunications and computing industries, where its capabilities are hugely beneficial. Its exceptional linearity makes it suitable for use in various analog systems, while its low power consumption is extremely useful in mobile devices, since battery life can be increased by using this device. Additionally, its low-noise characteristics are extremely useful for high-frequency applications, reducing any unwanted interference in wireless networks.
In conclusion, the IPD50R1K4CEAUMA1 is a single FET device that is used in a variety of applications due to its ability to control the flow of electricity. It is highly versatile and offers excellent linearity, low-noise operation, and low power consumption, making it suitable for a wide range of applications in the telecommunications, computing, and automotive industries.
The specific data is subject to PDF, and the above content is for reference
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IPD50R520CPATMA1 | Infineon Tec... | -- | 1000 | LOW POWER_LEGACY |
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IPD50N06S2L13ATMA2 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 50A TO252... |
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