IPD50N06S2L13ATMA2 Allicdata Electronics
Allicdata Part #:

IPD50N06S2L13ATMA2-ND

Manufacturer Part#:

IPD50N06S2L13ATMA2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 50A TO252-3
More Detail: N-Channel 55V 50A (Tc) 136W (Tc) Surface Mount PG-...
DataSheet: IPD50N06S2L13ATMA2 datasheetIPD50N06S2L13ATMA2 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 80µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3-11
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 12.7 mOhm @ 34A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IPD50N06S2L13ATMA2 MOSFET is a popular power transistor that is used in a wide range of applications, from DC-DC and AC-DC converters to audio amplifiers. It is characterized by excellent performance and low on-resistance. This device is suitable for high current and high frequency applications, with the capability of handling currents up to 60A and operating frequencies up to 150kHz.

At its core, the IPD50N06S2L13ATMA2 is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is a voltage-controlled device which provides relatively low power loss compared to traditional resistors and transistors. This is achieved by using a low on-state resistance (Rdson). As a single MOSFET, it is designed to have a single drain, gate, and source. Its structure has three terminals, namely gate, drain, and source.

When voltage is applied to the gate terminal, it induces a conducting channel between the drain and source terminals. The application of a positive gate voltage will cause the drain current to increase, while a negative gate voltage reduces the drain current. With the use of this control mechanism, an amplification of signal is produced. This signal amplification is one of the advantages of using MOSFETs over traditional transistors.

The IPD50N06S2L13ATMA2 has a wide range of applications. It is most commonly used in DC-DC and AC-DC converters, audio amplifiers, switching regulators, and power supplies. This power transistor also allows for higher efficiency and reduced power loss compared to other transistors and resistors. This allows for more efficient operation of power converters and audio amplifiers.

The IPD50N06S2L13ATMA2 also has advantages over other types of power transistors. For example, its low Rdson and high current capacity enable the design of power circuits with minimum power loss. Furthermore, due to the excellent thermal and electrical characteristics of the IPD50N06S2L13ATMA2, it is suitable for use in high-frequency applications including high-efficiency DC-DC and AC-DC converters.

Overall, the IPD50N06S2L13ATMA2 is an excellent choice for a wide range of applications. Its low on-resistance and high current capacity make it ideal for high frequency applications. Furthermore, its excellent thermal and electrical characteristics make it suitable for use in power circuits with minimum power loss. For these reasons, this power transistor is a popular choice for DC-DC and AC-DC converters, audio amplifiers, switching regulators, and power supplies.

The specific data is subject to PDF, and the above content is for reference

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