IPD50R500CEAUMA1 Datasheet/PDFThe IPD50R500CEAUMA1 is a N-Channel Enhancement mode MOSFET developed by Infineon based on the Power MOSFET technology, featuring an additional light load low on-state resistance. These characteristics make this device ideal for applications that need to operate with higher efficiency and high current.
1. Application Field of IPD50R500CEAUMA1
The IPD50R500CEAUMA1 is a power MOSFET with an n-channel enhancement mode. It is a three-terminal semiconductor device used for switching applications, in systems such as motor drivers, DC-DC converters, power invertors, electric vehicle chargers, medical equipment and lighting systems. These transistors can also be used in electric power transmission, solar power generation systems and thermoelectric generation systems.
It is especially suited for high power applications as its drain-source breakdown voltage is 500V, its continuous drain current is 50A(TC=100C), and its RDS(on) is 8mOhm at VGS=10V.
2. Working Principle of IPD50R500CEAUMA1
The IPD50R500CEAUMA1 N-Channel MOSFET is based on the enhancement mode power MOSFET technology, which is a field effect transistor with an n-type channel, used for switching applications. The operation of the device is based on the two channels of a MOSFET: the source and the drain. The gate is used to control the current between the two channels.
When a voltage is applied to the gate, it attracts electrons to the channel, which creates an enhanced conductive channel between the source and the drain. This allows current to flow from the source to the drain, thus turning ‘on’ the MOSFET. If a reverse voltage is applied to the gate, the electrons are repelled from the channel, which breaks the connection between the source and the drain and thus turns the MOSFET ‘off’.
The IPD50R500CEAUMA1 has an additional light load low on-state resistance, making it a better choice for switching applications that need to operate with higher efficiency and high current. Its drain-source breakdown voltage is 500V, its continuous drain current is 50A(TC=100C), and its RDS(on) is 8mOhm at VGS=10V. This makes this device ideal for applications that require a high breakdown voltage and low on-state resistance.