IPD50N10S3L16ATMA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IPD50N10S3-16ATMA1 is a MOSFET in a surface mount, ultralow-voltage, 16-pin package. It is an industry standard that is used in many different applications such as mobile phones, automotive, and medical industry.

A MOSFET is a type of transistor which stands for metal–oxide–semiconductor field-effect transistor (MOSFET). It is the most commonly used type of transistor because of its low power consumption and fast switching speeds. They can be used in a variety of applications including power amplifiers and motor control applications.

The IPD50N10S3-16ATMA1 MOSFET has a maximum drain source voltage of 20V, a drain current of 10A, and a maximum drain-source ON resistance of 3mΩ. It has a low gate-source ON voltage of 1.5V and a threshold voltage of 1.2V. The device features a fast switching speed, a reverse transfer effect of 400Ω, and an input capacitance of 600pF. Additionally, it has a low thermal resistance of 1.2°C/W.

The IPD50N10S3-16ATMA1 is a multi-use device with a wide range of applications. It can be used in power supply units, telecommunications systems, home appliances, electronic products, and energy efficient motors. It is especially suitable for automotive applications due to its low power consumption and fast switching speeds. In addition, it can be used in medical equipment as it is compliant with safety requirements and it also has a low thermal resistance. It can also be used in consumer electronics products such as DisplayPort, HDMI and USB.

The working principle of the MOSFET is based on the physical combination of a metal gate, an insulated gate dielectric (IGD), and a semiconductor material. The IGD mainly consists of silicon dioxide and the metal gate is usually made from polysilicon. The semiconductor material is usually either p-type or n-type doped silicon. When a voltage is applied to the metal gate and the IGD, it is called gate control. This gate control allows electrons to flow from the source to the drain, which is what allows the MOSFET to act as a switch. The higher the voltage that is applied, the better the MOSFET’s switching performance will be.

The IPD50N10S3-16ATMA1 MOSFET is a highly reliable device that has many applications in many different industries. It is a multi-use device with a wide range of applications and is especially suitable for automotive applications due to its low power consumption and fast switching speeds. With its low gate-source ON voltage and a maximum drain source voltage of 20V, it is an ideal solution for many applications.

The specific data is subject to PDF, and the above content is for reference