IPD50R280CEBTMA1 Allicdata Electronics
Allicdata Part #:

IPD50R280CEBTMA1TR-ND

Manufacturer Part#:

IPD50R280CEBTMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 500V 13A PG-TO252
More Detail: N-Channel 500V 13A (Tc) 92W (Tc) Surface Mount PG-...
DataSheet: IPD50R280CEBTMA1 datasheetIPD50R280CEBTMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 92W (Tc)
FET Feature: Super Junction
Input Capacitance (Ciss) (Max) @ Vds: 773pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32.6nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.2A, 13V
Drive Voltage (Max Rds On, Min Rds On): 13V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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The IPD50R280CEBTMA1, which is also known as a PowerTrench MOSFET, is a single, field-effect transistor that is used in various types of applications. This type of MOSFET is primarily used in power switching applications, such as high-current, low-voltage applications, and can be used as a switch, amplifier or inverter. The IPD50R280CEBTMA1 is primarily used in power applications such as switching power supplies, DC-DC converters, lighting applications, and motor control.

This PowerTrench MOSFET is a single, N-channel MOSFET that operates with an on-state drain current of up to 50A and a drain-source voltage of up to 28V. This type of MOSFET also operates with a power dissipation of up to 29W (Tc=25°C) and a channel resistance of up to 0.0055 Ohms. The IPD50R280CEBTMA1 is constructed from an Si-based trench MOSFET technology that provides excellent switching characteristics and high performance.

The working principle of the IPD50R280CEBTMA1 is fairly simple. The MOSFET consists of two main components-the gate and the source. The gate is responsible for controlling the flow of charge carriers between the source and drain, and provides the power voltage to the source. When the gate receives an electrical signal, the device will either allow the current to flow from the source to the drain or prevent it from passing. This type of MOSFET can also be used as an amplifier or inverter, depending on the type of circuit it is used in.

In addition to its use in power applications, the IPD50R280CEBTMA1 has also been used in many other applications such as audio amplifiers, ground-fault monitors and linear regulators. This type of MOSFET can also be used in temperature sensors and power controllers. In addition, the IPD50R280CEBTMA1 is also used in various automotive applications, such as engine starting and fuel management systems.

The IPD50R280CEBTMA1 is an excellent choice for a variety of applications in the power electronics market. This type of MOSFET is capable of offering high performance, reliable switching and high efficiency at a competitive cost. It is also a great choice for applications that require flexibility and reliability.

The specific data is subject to PDF, and the above content is for reference

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