IPD50R380CEATMA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IPD50R380CEATMA1 is a single drain N-Channel MOSFET designed to provide superior switching power performance. IPD50R380CEATMA1 is the perfect choice for high current and high voltage applications in a compact footprint due to its low gate charge output characteristics, high transconductance, high avalanche energy capabilities, and gate-source capacitance. Its wide range of enhancement and depletion modes, as well as its specific on-resistance, allows it to be used in many different operating conditions.

Applications

IPD50R380CEATMA1 can be used in a variety of applications which depend on its high current and voltage capabilities. It is suitable for use in power switching and amplifier circuits, current limiters, high voltage switching and high voltage rectifying applications due to its low on-resistance and wide volt-ampere ratings. Furthermore, IPD50R380CEATMA1 is ideal for automotive, instrumentation, and telecommunication applications thanks to its extended temperature operating range.

Working principle

IPD50R380CEATMA1 is a single N-Channel MOSFET which works based on two electrodes: the gate and the drain. The gate is the control electrode, the current flowing between the gate and the drain is controlled by the voltage applied to the gate. When a positive voltage is applied to the gate, the MOSFET will turn on and allow current to flow between the source and the drain. Otherwise, no current is allowed to flow. Thanks to its low on-resistance, IPD50R380CEATMA1 can deliver high currents while keeping the power losses to a minimum.

When the gate-source voltage is below the threshold voltage, the drain-source voltage has no influence on the current flowing through the channel. This is what is called ideal saturation region, when the MOSFET is in its most efficient state. On the other hand, when the gate-source voltage is above the threshold voltage, the drain-source voltage has a significant influence on the channel current. This region is called the linear region, and is responsible for the conduction losses.

The threshold voltage is the critical factor which determines when a MOSFET turns on. IPD50R380CEATMA1 has a low threshold voltage which allows for higher efficiency and higher current ratings. This makes it suitable for a wide variety of applications.

Furthermore, IPD50R380CEATMA1 has a wide range of enhancement and depletion modes, depending on the polarity of the applied voltage. These modes significantly enhance its versatility and allow for a wide range of operating conditions.

Finally, IPD50R380CEATMA1 has low gate charge output characteristics which reduce the time it takes to switch on and off. Moreover, its high transconductance and avalanche energy capabilities allow it to e used in high voltage and high current applications.

The specific data is subject to PDF, and the above content is for reference