Allicdata Part #: | IPD50R380CEAUMA1TR-ND |
Manufacturer Part#: |
IPD50R380CEAUMA1 |
Price: | $ 0.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET NCH 500V 14.1A TO252 |
More Detail: | N-Channel 500V 14.1A (Tc) 98W (Tc) Surface Mount P... |
DataSheet: | IPD50R380CEAUMA1 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.28756 |
Vgs(th) (Max) @ Id: | 3.5V @ 260µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 98W (Tc) |
FET Feature: | Super Junction |
Input Capacitance (Ciss) (Max) @ Vds: | 584pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 24.8nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 3.2A, 13V |
Drive Voltage (Max Rds On, Min Rds On): | 13V |
Current - Continuous Drain (Id) @ 25°C: | 14.1A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IPD50R380CEAUMA1 is a single N-channel Enhancement Mode Field-Effect Transistor (FET) designed for low voltage and low current applications. It is highly suitable for switching and small signal controlling applications due to its low on-resistance and low gate-threshold voltage. This transistor can be found in a variety of applications, including power tools, home appliances, and automotive.
The IPD50R380CEAUMA1 is an enhancement-mode field effect transistor (FET). It consists of three main components: the source, the drain, and the gate. The source and drain are the two electrodes of the transistor and are connected to the source and drain leads. The source and drain leads connect to the power supply to provide the current. The gate is the control electrode of the transistor and is used to control the current flow from the source to the drain. It is insulated from the source and drain by a thin layer of insulating material called the gate oxide. When a voltage (VGS) is applied to the gate, the electric field induced by the gate oxide creates a conducting channel between the source and drain. This conducting channel allows current to flow from the source to the drain.
When used as a switch, the IPD50R380CEAUMA1 transistor can be operated in either cut-off or saturation mode. In cut-off mode, the transistor is off, and no current is allowed to pass from the source to the drain. In saturation mode, the transistor is on, and current is allowed to pass from the source to the drain. The ON resistance of the transistor, referred to as RDS(on), determines the current flow through the transistor when in saturation mode. The RDS(on) of the IPD50R380CEAUMA1 is 50 milliohms.
The IPD50R380CEAUMA1 transistor also has a gate-threshold voltage (Vth). This is the voltage that must be applied to the gate in order to turn the transistor ON. In this case, the Vth of the IPD50R380CEAUMA1 is 2.8 volts.
The IPD50R380CEAUMA1 transistor is used in a variety of applications where low voltage and low current are required. Some of these applications include motor control, digital logic control, level shifters, voltage regulators, digital control systems, and interface control. In motor control applications, the transistor is used to switch the motor on and off. In digital logic control applications, the transistor is used to control the logic level of digital signals. The transistor can also be used as a level shifter to convert the voltage of a signal from one level to another. In voltage regulator applications, the transistor is used to regulate the output voltage of a power supply. The transistor is also used in digital control systems such as CPU’s and microcontrollers to control the flow of data. Finally, the transistor can be used in interface control applications, where it is used to control signals between two devices.
In summary, the IPD50R380CEAUMA1 transistor is a single N-channel enhancement mode FET designed for low voltage and low current applications. It has an RDS(on) value of 50 milliohms and a gate-threshold voltage of 2.8 volts. This transistor can be found in a variety of applications, including motor control, level shifters, digital logic control, voltage regulators, interface control, and digital control systems.
The specific data is subject to PDF, and the above content is for reference
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