IPD50N08S413ATMA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IPD50N08S413ATMA1 is a P-Channel enhancement mode Field Effect Transistor (FET). It is manufactured by Infineon Technologies and is part of their OptiMOS family of MOSFETs. The OptiMOS family has been specifically designed for Power Management applications, providing improved performance, power density and cost effectiveness.

The IPD50N08S413ATMA1 is a P-Channel Logic Level Enhancement Mode with a load current rating of 8A, rDS(on) of 17.8mΩ, and a maximum operating voltage of 40V. It also features a symmetrical gate resistance, enabling improved electrical performance. This type of FET can be used in a wide range of applications, including high current power switching, motor control, and power conversion.

The working principle of the IPD50N08S413ATMA1 is based on a p-doping of the channel by applying a gate voltage and creating an inverse Compton scattering effect. This means that electrons within the gate region of the FET will be attracted towards the gate, resulting in a depletion region where the majority of charge carriers have been repelled away from the gate. This creates a resistance, which is known as the Gate Resistance. This is what allows the FET to control the current flow through the channel and subsequently, the power distribution.

The IPD50N08S413ATMA1 is a very efficient device that can be used in a variety of applications requiring high current switching. It is especially beneficial in applications such as motor controllers, power supplies and lighting systems. Additionally, its improved performance and cost effectiveness make it a great choice for applications that require reliable high current switching at low on-state voltage drops.

Overall, the IPD50N08S413ATMA1 is a great choice for high current switching applications, due to its high charge density and improved performance. It is well suited for use in wide range of power management applications, allowing for increased efficiency and cost savings. The device\'s symmetrical gate resistance makes it an ideal choice for applications that require robust switching performance at low on-state voltage drops.

The specific data is subject to PDF, and the above content is for reference