IPD50R280CEATMA1

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The IPD50R280CEATMA1 MOSFET is a single N-channel enhancement mode power MOSFET used as a switch in various electronic devices. It is used when a higher degree of current control is desired in a circuit. The IPD50R280CEATMA1 features maximum drain source voltage of 55V, drain current of 28A, and on resistance of 148mΩ. It operates at a maximum temperature of 175℃, making it well suited for a wide range of applications.

The application field of IPD50R280CEATMA1 MOSFET primarily includes various consumer electronics including consumer appliances, smartphones, game console, home theater systems, portable audio systems, and cellular phones. It can also be utilized in various industrial and commercial applications including uninterruptible power supplies, power factor correction, power distribution, frequency conversion, motor drives, automotive applications, and many other applications where high current needs to be switched with low losses.

The working principle of the IPD50R280CEATMA1 is based on MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). MOSFETs are represented in a circuit by three terminals, the gate, drain and source. When the gate terminal is at a high voltage relative to the drain, a channel is created through the field effect between the drain and source allowing current to flow. The IPD50R280CEATMA1 allows current to flow through the drain and source when a high positive voltage is applied at the gate terminal relative to the drain terminal. When the voltage is removed or reduced, current is no longer allowed to flow through the drain and source.

The major components of IPD50R280CEATMA1 are made up of metal-oxide-semiconductor (MOS) technology. It consists of N-channel and P-channel MOSFETs which are used for the main gate switch. The gate is also form a metal-oxide gate with a thin gate oxide layer to control the current and voltage applied to the gate. The metal-oxide layer enhances the conductivity of the gate terminal and ensures a low resistance switching. A source terminal is connected to the source of the MOSFET and a drain terminal is connected to the drain. The channel width of the MOSFET is the distance in nanometers between the source terminal and the drain terminal.

The IPD50R280CEATMA1 is ideal for a wide range of industrial and consumer applications because of its low on-resistance and maximum 46A drain current. Additionally, it is designed to be easily integrated into a circuit, making it suitable for fast-switching control applications. Moreover, the chip-style package makes it convenient for PCB assembly and the excellent thermal performance makes it suitable for applications operating at high temperatures.

In summary, the IPD50R280CEATMA1 is a single N-channel enhancement mode power MOSFET used for switching applications. It has a maximum drain source voltage of 55V, drain current of 28A, and on resistance of 148mΩ. It also has excellent thermal performance, making it suitable for a wide range of applications.

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