
Allicdata Part #: | IPD50R3K0CEAUMA1TR-ND |
Manufacturer Part#: |
IPD50R3K0CEAUMA1 |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 500V 1.7A PG-TO-252 |
More Detail: | N-Channel 500V 1.7A (Tc) 26W (Tc) Surface Mount PG... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.11000 |
10 +: | $ 0.10670 |
100 +: | $ 0.10450 |
1000 +: | $ 0.10230 |
10000 +: | $ 0.09900 |
Series: | CoolMOS™ CE |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 1.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 13V |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 400mA, 13V |
Vgs(th) (Max) @ Id: | 3.5V @ 30µA |
Gate Charge (Qg) (Max) @ Vgs: | 4.3nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 84pF @ 100V |
FET Feature: | -- |
Power Dissipation (Max): | 26W (Tc) |
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IPD50R3K0CEAUMA1 transistors are part of the field-effect transistor (FET) family, a type of transistor in which the conduction of electric current through the channel between its source and drain terminals is moderated by a gate that is generally insulated from it. They are also commonly referred to as Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), as this is the basic mechanism by which most modern FETs operate.The IPD50R3K0CEAUMA1 is a single-level MOSFET; it has only one gate terminal as opposed to the two gate terminals seen in duallevel or multi-level MOSFETs. This single-level construction increases the transistor’s efficiency and power, as well as its relative simplicity.In operation, the IPD50R3K0CEAUMA1 works on the same basic principle as any FET. A potential voltage difference is applied across the source and drain terminals, which initiate a flow of electric current through the channel provided by the gate. This current flow is known as the drain-to-source current or drain current. This current is regulated by the voltage applied to the gate, which modulates the width and type of channel between the source and the drain.The IPD50R3K0CEAUMA1 device is often used in circuits requiring high current handling capabilities, as its single-level construction makes it more efficient in this regard. It is often used for switching applications such as switching high-current loads, as well as for driving actuators, controlling lighting, and in motor control circuits. Its high-current capabilities also make it an ideal choice for power supply designs, and its relative low on-resistance makes it an excellent option for controlling high-voltage loads.The IPD50R3K0CEAUMA1 is a versatile and reliable device that offers a host of attractive benefits. It is capable of operating at high frequencies, making it suitable for high-speed switch or logic applications. It is also quite efficient, allowing for reduced power consumption and cooler operation, both of which result in longer device life. Furthermore, its small size and single-level construction makes it well suited for use in tight spaces or densely-populated circuits.In short, the IPD50R3K0CEAUMA1 is an excellent option for applications requiring high tide current handling, high speeds, and power efficiency. Its reliability, small size, and single-level construction make it an ideal choice for a wide range of applications, from high-current switching to motor control, power supply designs, and much more.
The specific data is subject to PDF, and the above content is for reference
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IPD50R520CPATMA1 | Infineon Tec... | -- | 1000 | LOW POWER_LEGACY |
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IPD50R3K0CEBTMA1 | Infineon Tec... | 0.13 $ | 1000 | MOSFET N-CH 500V 1.7A PG-... |
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IPD50N06S2L13ATMA2 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 50A TO252... |
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