IPD50N03S2L06ATMA1 Allicdata Electronics
Allicdata Part #:

IPD50N03S2L06ATMA1TR-ND

Manufacturer Part#:

IPD50N03S2L06ATMA1

Price: $ 0.39
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 50A TO252-3
More Detail: N-Channel 30V 50A (Tc) 136W (Tc) Surface Mount PG-...
DataSheet: IPD50N03S2L06ATMA1 datasheetIPD50N03S2L06ATMA1 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.35085
Stock 1000Can Ship Immediately
$ 0.39
Specifications
Vgs(th) (Max) @ Id: 2V @ 85µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3-11
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Series: Automotive, AEC-Q101, OptiMOS™
Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IPD50N03S2L06ATMA1 is a logic level MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is manufactured by Semtech, which is an electronics industry leader in providing some of the most advanced voltage control ICs and discrete power products. The IPD50N03S2L06ATMA1 is a depletion-mode, N-channel, open-drain MOSFET that is useful in applications that require a low voltage, low on-resistance (<3 ohms for logic level variants) and flow control device.

The IPD50N03S2L06ATMA1 comes in a tiny SOT-23 package with a height of only 1.1 mm. This makes it ideal for space-sensitive applications such as portable electronics and other miniaturized circuit designs. This device also features a low diode forward voltage drop of only 0.4 V, meaning that the voltage boosting required for driving LED or RF power transmission is minimized and thus leads to improved system efficiency. The low on-resistance and low parasitic capacitance of the device also makes it desirable in high-speed switching operations.

The IPD50N03S2L06ATMA1 is mainly utilized in low power applications like level shifters, ESD protection and analog gates, as well as radio frequency, low voltage and automotive applications. Its low on-resistance allows it to operate in high-speed switching and low-voltage control applications. Additionally, because of its small size and low thermal resistance, the IPD50N03S2L06ATMA1 is ideal for applications in electronic systems that are thermally sensitive.

The basic operation of the IPD50N03S2L06ATMA1 is based on the principle of Field Effect Transistor. When voltage is applied to the gate, an electric field is created in the P-type substrate material below it, which attracts electrons from nearby N-type material to the gate. As the number of electrons at the gate increases, the resistance between the drain and the source decreases, leading to the flow of current from the drain to the source. The magnitude of the current flow is then controlled by the applied gate-source voltage. Thus, the IPD50N03S2L06ATMA1 is useful in amplifying low-level input signals, controlling power, and as an energy-saving switch.

Overall, the IPD50N03S2L06ATMA1 is an ideal choice for applications that require performance and reliability in a very small package. Its ability to control and amplify low-level input signals and its low on-resistance and thermal resistance makes it suitable for a wide variety of applications. Its small size also allows it to be used in space-sensitive designs, making it a very attractive choice for powering portable electronics.

The specific data is subject to PDF, and the above content is for reference

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