IPD50R950CEAUMA1

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The Toshiba IPD50R950CEAUMA1 is a high-performance and high-speed depletion-mode N-channel MOSFET with enhanced dv/dt ruggedness. This MOSFET is designed to offer superior off-state characteristics and performance at high power switching. It can handle an output voltage of up to 500V and a maximum drain-source current of up to 9A. The IPD50R950CEAUMA1 is also compatible with many other applications, such as RF power amplifiers, electronic ballasts, and AC power supplies.

Applications of IPD50R950CEAUMA1

The IPD50R950CEAUMA1 is designed for high-current applications, such as motor control, on/off switch, lighting, and power switching. It can be used for lamp control, DC-DC converters, motor control, and uninterruptible power supplies. The IPD50R950CEAUMA1 features an intrinsic 500V drain-source breakdown voltage, a fast switching speed, low gate charge, and low on-resistance. Its excellent dv/dt ruggedness ensures reliable operation even under the most punishing switching applications.

Working Principle of IPD50R950CEAUMA1

The IPD50R950CEAUMA1 is a depletion-mode MOSFET, meaning that it is normally “on” and requires a negative gate voltage in order to turn it “off”. When the gate voltage is less than the threshold voltage, current passes between the drain and source, and the MOSFET is “on”. When a negative gate voltage is applied, the channel between the source and drain is cut off, and the MOSFET is “off”.

The IPD50R950CEAUMA1 features an ultra-low gate charge, which is ideal for high-power switching applications and allows for fast switching speeds. The device also has an enhanced dv/dt ruggedness, which increases reliability. The device is designed to minimize parasitics and prevent noise, allowing for reliable, high-speed switching and maximum power efficiency.

Summary

The Toshiba IPD50R950CEAUMA1 is a high-performance and high-speed depletion-mode N-channel MOSFET designed for high-current applications. It is suitable for motor control, on/off switch, lighting, and power switching. The MOSFET has an intrinsic 500V drain-source breakdown voltage, a fast switching speed, low gate charge, and low on-resistance. It also has excellent dv/dt ruggedness, allowing for reliable operation even under demanding switching applications.

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